The given electrical network is equivalent to 

1. AND gate 

2. OR gate

3. NOR gate

4. NOT gate 

In a common-emitter transistor amplifier, the audio signal voltage across the collector is 3 V. The resistance of the collector is 3 k$\Omega$. If the current gain is 100 and the base resistance is 2 k$\Omega$, the voltage and power gain of the amplifier are:

1. 200 and 1000

2. 15 and 200

3. 150 and 15000

4. 20 and 2000

The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance $R_1$ will be

1. 2.5 A                     

2. 10.0 A

3. 1.43 A                   

4. 3. 13 A

What is the output Y in the following circuit, when all the three inputs A,B,C are first 0 and then 1 ?

1. 0,1

2. 0,0 

3. 1,0

4. 1,1

To get output 1 for the following circuit, the correct choice for the input is

1. $A=1, B=0, C=0$       

2. $A=1, B=1, C=0$

3. $A=1, B=0, C=1$       

4. $A=0, B=1, C=0$

Which logic gate is represented by the following combination of logic gates?

1. OR
2. NAND
3. AND
4. NOR

In the given figure, a diode D is connected to an external resistance R = 100 Ω  and an e.m.f of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be


1. 30mA

2. 40mA

3. 20mA

4. 35mA

The barrier potential of a p-n junction depends on

(i)type of semiconductor material

(ii)amount of doping

(iii)temperature

Which one of the following is correct

1. (i) and (ii)only

2. (ii) only

3. (ii) and (iii)only

4. (i),(ii) and (iii)

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is

(1)0.75A                             

(2)zero

(3)0.25A                               

(4)0.5A    

C and Si both have same lattice structure,having 4 bonding electrons in each.However, C is insulator whereas Si is intrinsic semiconductor. This is because 

1. in case of C, the valence band is not completely filled at absolute zero temperature

2. in case of C,the condition band is partly filled even at absolute zero temperature 

3. the four bonding electrons in the case of C lie in the second orbit,Whereas in the case of Si they lie in the third

4 .the four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit