In an NPN transistor the collector current is 24 mA. If 80% of electrons reach collector its base current in mA is
1. 36 2. 26
3. 16 4. 6
The electrical resistance of depletion layer is large because:
1. It has no charge carriers
2. It has a large number of charge carriers
3. It contains electrons as charge carriers
4. It has holes as charge carriers
The reverse biasing in a PN junction diode
1. Decreases the potential barrier
2. Increases the potential barrier
3. Increases the number of minority charge carriers
4. Increases the number of majority charge carriers
In a PN-junction diode:
1. | the current in the reverse biased condition is generally very small. |
2. | the current in the reverse biased condition is small but the forward-biased current is independent of the bias voltage. |
3. | the reverse-biased current is strongly dependent on the applied bias voltage. |
4. | the forward-biased current is very small in comparison to reverse-biased current. |
The circuit is equivalent to
1. AND gate 2. NAND gate
3. NOR gate 4. OR gate
A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly
1. 2.
3. 4.
A transistor is operated in common-emitter configuration at such that a change in the base current from 100 to 200 produces a change in the collector current from 5 mA to 10 mA. The current gain is
1. 75 2. 100
3. 150 4. 50
The device that can act as a complete electronic circuit is
1. Junction diode
2. Integrated circuit
3. Junction transistor
4. Zener diode
A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit, as shown in the figure. The current through the diode is:
1. 10 mA
2. 15 mA
3. 20 mA
4. 5 mA
To get an output Y=1 in given circuit, which
of the following input will be correct ?
A B C A B C
1. 1 0 0 2. 1 0 1
3. 1 1 0 4. 0 1 0