Avalanche breakdown is due to 

(1) Collision of minority charge carrier

(2) Increase in depletion layer thickness

(3) Decrease in depletion layer thickness

(4) None of these

Subtopic:  Energy Band theory |
 52%
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Zener breakdown in a semi-conductor diode occurs when

(1) Forward current exceeds certain value

(2) Reverse bias exceeds certain value

(3) Forward bias exceeds certain value

(4) Potential barrier is reduced to zero

Subtopic:  Applications of PN junction |
 81%
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When forward bias is applied to a P-N junction, then what happens to the potential barrier VB, and the width of charge depleted region x

(1) VB increases, x decreases

(2) VB decreases, x increases

(3) VB increases, x increases

(4) VB decreases, x decreases

Subtopic:  PN junction |
 71%
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Function of rectifier is 

(1) To convert ac into dc             

(2) To convert dc into ac

(3) Both (a) and (b)                   

(4) None of these

Subtopic:  Rectifier |
 79%
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When the P end of P-N junction is connected to the negative terminal of the battery and the N end to the positive terminal of the battery, then the P-N junction behaves like 

(1) A conductor                       

(2) An insulator

(3) A super-conductor             

(4) A semi-conductor

Subtopic:  Applications of PN junction |
 86%
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A potential barrier of 0.50 V exists across a P-N junction. If the depletion region is 5.0×10-7m wide, the intensity of the electric field in this region is 
1. 1.0×106 V/m                     

2. 1.0×105 V/m

3. 2.0×105 V/m                     

4. 2.0×106 V/m

Subtopic:  PN junction |
 82%
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If no external voltage is applied across P-N junction, there would be 

(1) No electric field across the junction

(2) An electric field pointing from N-type to P-type side across the junction

(3) An electric field pointing from P-type to N-type side across the junction

(4) A temporary electric field during formation of P-N junction that would subsequently disappear

Subtopic:  PN junction |
 71%
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Barrier potential of a P-N junction diode does not depend on 

(1) Temperature               

(2) Forward bias

(3) Doping density             

(4) Diode design (shape and size)

Subtopic:  PN junction |
 82%
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The diode shown in the circuit is a silicon diode. The potential difference between the points A and B will be



(1) 6 V

(2) 0.6 V

(3) 0.7 V

(4) 0 V

Subtopic:  PN junction |
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Zener breakdown takes place if 

(1) Doped impurity is low             

(2) Doped impurity is high

(3) Less impurity in N-part           

(4) Less impurity in P-type

Subtopic:  Applications of PN junction |
 78%
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