The voltage gain of an amplifier with 9% negative feedback is 10. The voltage gain without feedback will be
1. 90
2. 10
3. 1.25
4. 100
A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly
1.
2.
3.
4.
The circuit is equivalent to
1. AND gate 2. NAND gate
3. NOR gate 4. OR gate
In the forward bias arrangement of a PN-junction diode
(1) The N-end is connected to the positive terminal of the battery
(2) The P-end is connected to the positive terminal of the battery
(3) The direction of current is from N-end to P-end in the diode
(4) The P-end is connected to the negative terminal of battery
1. | the current in the reverse biased condition is generally very small. |
2. | the current in the reverse biased condition is small but the forward-biased current is independent of the bias voltage. |
3. | the reverse-biased current is strongly dependent on the applied bias voltage. |
4. | the forward-biased current is very small in comparison to reverse-biased current. |
The cut-in voltage for silicon diode is approximately
(1) 0.2 V
(2) 0.6 V
(3) 1.1 V
(4) 1.4 V
The electrical circuit used to get smooth output from a rectifier circuit is called:
1. oscillator.
2. filter.
3. amplifier.
4. logic gates.
PN-junction diode works as a insulator, if connected
(1) To A.C.
(2) In forward bias
(3) In reverse bias
(4) None of these
The reverse biasing in a PN junction diode
1. Decreases the potential barrier
2. Increases the potential barrier
3. Increases the number of minority charge carriers
4. Increases the number of majority charge carriers
The electrical resistance of depletion layer is large because:
1. It has no charge carriers
2. It has a large number of charge carriers
3. It contains electrons as charge carriers
4. It has holes as charge carriers