1. | the depletion region becomes thick. |
2. | the p-side is at a higher potential than n-side. |
3. | the current flowing is zero. |
4. | the effective resistance is of the order of 106 Ω. |
When a transistor is used as a switch it is in:
1. Active state
2. Cut off state
3. Saturation state
4. Both cut off state and saturation state are possible
Which of the following is correct for n-type semiconductors?
1. | electron is the majority carriers and trivalent atoms are dopants. |
2. | electrons are majority carriers and pentavalent atoms are dopants. |
3. | holes are majority carriers and pentavalent atoms are dopants. |
4. | holes are majority carriers and trivalent atoms are dopants. |
If α be the current gain of a transistor in common base mode and β be the current gain in
common emitter mode then-
1. α < 1
2. β > 1
3. α = β1 + β
4. All of these
The conductivity of an n-type semiconductor whose density of conduction electrons is ne, Density of holes is nh, Mobility of conduction electrons is meand Mobility of holes is mh, will be
1. e[nemh + neme]
2. e[neme + nhme]
3. ene[me + mh]
4. e[neme + nhmh]
The current through an ideal p-n junction diode shown in the circuit will be:
1. 5 A
2. 0.2 A
3. 0.6 A
4. zero
In the given circuit power
developed in 1kΩ resistor is
1. 36 mW
2. 12 mW
3. 144 mW
4. 64 mW
A semiconductor is known to have an electron concentration of 8×1013 cm−3, and a hole concentration of 5×102 cm−3. The semiconductor is:
1. | n-type | 2. | p-type |
3. | intrinsic | 4. | insulator |
A transistor is operated in common emitter configuration at Vc = 10V. When base current is changed from 10mA to 30mA, it produces a change in emitter current from 2A to 4A, the current amplification factor is
1. 100
2. 99
3. 10
4. 9