In the circuit shown in the figure, the maximum output voltage V0 is :

1. 0 V                        2. 5 V
3. 10 V                      4. 52 

Subtopic:  Rectifier |
 51%
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In the following circuit, find I1 and I2.

(1) 0, 0

(2) 5 mA, 5 mA

(3) 5 mA, 0

(4) 0, 5 mA

Subtopic:  Applications of PN junction |
 58%
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For the transistor circuit shown below, if β = 100, voltage drop between emitter and base is 0.7 V, then value of VCE will be :

(1) 10 V
(2) 5 V
(3) 13 V
(4) 0 V

Subtopic:  Transistor (OLD NCERT) |
 65%
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Figure gives a system of logic gates. From the study of truth table it can be found that to produce a high output (1) at R, we must have

(1) X = 0, Y = 1
(2) X = 1, Y = 1
(3) X = 1, Y = 0
(4) X = 0, Y = 0

Subtopic:  Logic gates |
 71%
From NCERT
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The combination of gates shown below produces


(a) AND gate
(b) XOR gate
(c) NOR gate
(d) NAND gate

Subtopic:  Logic gates |
 67%
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The diagram of a logic circuit is given below. The output F of the circuit is represented by

(1) W(X+Y)
(2) W.(X.Y)
(3) W+(X.Y)
(4) W+(X+Y)

Subtopic:  Logic gates |
 56%
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Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the valve of V0 changes by 

(1) 0.2 V                   

(2) 0.4 V
(3) 0.6 V                   

(4) 0.8 V

Subtopic:  PN junction |
 73%
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In the circuit given below, V(t) is the sinusoidal voltage source, voltage drop VAB(t) across the resistance R is

(a) Is half wave rectified
(b) Is full wave rectified
(c) Has the same peak value in the positive and negative half cycles
(d) Has different peak values during positive and negative half cycle

Subtopic:  Applications of PN junction |
From NCERT
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A 2V battery is connected across the points A and B as shown in the figure given below. Assuming that the resistance of each diode is zero in forward bias and infinity in reverse bias, the current supplied by the battery when its positive terminal is connected to A is 

(a) 0.2 A
(b) 0.4 A
(c) Zero
(d) 0.1 A

Subtopic:  PN junction |
 84%
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The i-V characteristic of a P-N junction diode is shown below. The approximate dynamic resistance of the P-N junction when a forward bias of 2 volt is applied

(1) 1 Ω
(2) 0.25 Ω 
(3) 0.5 Ω
(4) 5 Ω

Subtopic:  PN junction |
 57%
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