C and Si both have same lattice structure,having 4 bonding electrons in each.However, C is insulator whereas Si is intrinsic semiconductor. This is because 

1. in case of C, the valence band is not completely filled at absolute zero temperature

2. in case of C,the condition band is partly filled even at absolute zero temperature 

3. the four bonding electrons in the case of C lie in the second orbit,Whereas in the case of Si they lie in the third

4 .the four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit

Subtopic:  Types of Semiconductors |
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From NCERT
NEET - 2012
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Transfer characteristic [output voltage V0 vs input voltage Vi] for a base biased transistor in CE configuration is as shown in the figure.For using transistor as a switch, it is used 

(1) in region III

(2) both in region (I) and (III)

(3) in region II

(4) in region I

Subtopic:  Transistor (OLD NCERT) |
 82%
From NCERT
NEET - 2012
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The input resistance of a silicon transistor is

100 Ω. Base current is changed by 40 μA

which results in a change in collector current

by 2 mA. This transistor is used as a common-

emitter amplifier with a load resistance of 4 kΩ.

The voltage gain of the amplifier is

1. 2000

2. 3000

3. 4000

4. 1000

Subtopic:  Transistor (OLD NCERT) |
 85%
From NCERT
NEET - 2012
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If a small amount of antimony is added to germanium crystal

(1) the antimony becomes an acceptor atom

(2) there will be more free electrons than holes in the semiconductor

(3) its resistance is increased

(4) it becomes a p-type semiconductor

Subtopic:  Types of Semiconductors |
 83%
From NCERT
NEET - 2011
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In forward biasing of the p-n junction 

(1) the positive terminal of the battery is connected to n-side and the depletion region becomes thin

(2) the positive terminal of the battery is connected to n-side and the depletion region becomes thick

(3) the positive terminal of the battery is connected to p-side and the depletion region becomes thin

(4) the positive terminal of the battery is connected to p-side and the depletion region becomes thick

Subtopic:  PN junction |
 88%
From NCERT
NEET - 2011
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A transistor is operated in common emitter configuration at VC=2 V such that a change in the base current from 100 μA to 300 μA produces a change in the collector current from 10 mA to 20 mA. The current gain is 

1. 75                                               2. 100

3. 25                                                4. 50

Subtopic:  Transistor (OLD NCERT) |
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From NCERT
NEET - 2011
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In the following figure, the diodes which are forward biased, are

                                                                    

                                                                  

(1) C and D only

(2) A and C only

(3) B only

(4) Band D only

Subtopic:  PN junction |
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From NCERT
NEET - 2011
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A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in the figure. The current through the diode is :

                      

1. 10 mA                                                    2. 15 mA

3. 20 mA                                                     4. 5 mA

 

 

Subtopic:  Applications of PN junction |
 61%
From NCERT
NEET - 2011
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Which one of the following statement is false?

(1) Pure Si doped with trivalent impurities gives a p-type semiconductor 

(2) Majority carries in a n-type semiconductor are holes

(3) Minority carries in a p-type semiconductor are electrons

(4) The resistance of intrinsic semiconductor decreases with increase of temperature 

Subtopic:  Types of Semiconductors |
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From NCERT
NEET - 2010
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To get an output Y =1 from the circuit shown below, the input must be

        A     B     C

(1)   0      1     0

(2)   0      0     1

(3)   1      0     1

(4)   1      0     0

 

Subtopic:  Logic gates |
 95%
From NCERT
NEET - 2010
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