Identify the operation performed by the circuit given below:

 

1. \(\text{OR}\)
2. \(\text{NOT}\)
3. \(\text{NAND}\)
4. \(\text{AND}\)

Draw the output signal \(Y\) in the given combination of gates :

1.
2.
3.
4.

The Zener diode has a voltage, \(V_z=30~\text{V}.\) The current passing through the diode for the following circuit is:

The forward-biased diode connection is:

1.		2.
3.		4.

The temperature dependence of resistances of \(\mathrm{Cu}\) and undoped \(\mathrm{Si}\) in the temperature range \(300\text-400~\text{K}\), is best described by:

If \(a,b,c,\) and \(d\) are inputs to a logic gate and \(x\) is its output, then based on the timing diagram shown below, what type of gate is this?

Match the semiconductor devices with their corresponding characteristic graphs labeled \(\mathrm{(a),(b),(c)}\) and \(\mathrm{(d)}.\)
   
Select the correct sequence from the options given below:

A \(5~\text{V}\) battery is connected across the points \(X\) and \(Y.\) Assume \(D_1\) and \(D_2\) to be normal silicon diodes. Find the current supplied by the battery if the \(+\text{ve}\) terminal of the battery is connected to point \(X. \) [Given: Barrier potential of Silicon = \(0.7~\text{V}\)] 

 
1. \(0.5~\text{A}\)
2. \(1.5~\text{A}\)
3. \(0.86~\text{A}\)
4. \(0.43~\text{A}\)

Zener breakdown occurs in a \(\mathrm{p\text{-}n}\) junction having \(\mathrm{p}\) and \(\mathrm{n}\) both:

The logic circuit shown above is equivalent to :

1.
2.
3.
4.