Q. No.Match List-I with List-II.
| List-I | List-II | ||
| (a) | intrinsic semiconductor | (e) | prepared by adding phosphorus |
| (b) | n-type semiconductor | (f) | the width is nearly one micron |
| (c) | p-type semiconductor | (g) | silicon |
| (d) | depletion layer | (h) | prepared by adding indium |
| 1. | a-g, b-e, c-h, d-f |
| 2. | a-h, b-f, c-e, d-g |
| 3. | a-e, b-g, c-f, d-h |
| 4. | a-f, b-h, c-g, d-e |
Subtopic: Types of Semiconductors |
93%
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Suitable impurities are added to a semiconductor depending on its use. This is to:
| 1. | increase its electrical resistivity |
| 2. | increase its electrical conductivity |
| 3. | increase its life |
| 4. | enable it to tolerate higher voltage |
Subtopic: Types of Semiconductors |
89%
From NCERT
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A semiconductor is known to have an electron concentration of cm-3 and a hole concentration of cm-3. The semiconductor is:
1. n-type
2. p-type
3. intrinsic
4. insulator
Subtopic: Types of Semiconductors |
87%
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Hole is:
| 1. | an anti-particle of electron. |
| 2. | a vacancy created when an electron leaves a covalent bond. |
| 3. | absence of free electrons. |
| 4. | an artificially created particle. |
Subtopic: Types of Semiconductors |
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A \(\text{Ge}\) specimen is doped with \(\text{Al}.\) The concentration of acceptor atoms is approximately \(10^{24}\) m-3 Given that intrinsic carrier concentration is nearly \(10^{19}\) m-3, then the concentration of electrons in the specimen is nearly:
1. \(10^{10}\) m-3
2. \(10^{14} \) m-3
3. \(10^{19}\) m-3
4. \(10^{18} \) m-3
1. \(10^{10}\) m-3
2. \(10^{14} \) m-3
3. \(10^{19}\) m-3
4. \(10^{18} \) m-3
Subtopic: Types of Semiconductors |
82%
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To make ordinary silicon into a p-type semiconductor, you might add to it:
1. Indium
2. Antimony
3. Germanium
4. Carbon
1. Indium
2. Antimony
3. Germanium
4. Carbon
Subtopic: Types of Semiconductors |
82%
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If a small amount of aluminium is added to the silicon crystal:
| 1. | its resistance decreases. |
| 2. | it becomes a p-type semiconductor. |
| 3. | there will be fewer free electrons than holes in the semiconductor. |
| 4. | All of these are correct. |
Subtopic: Types of Semiconductors |
75%
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An intrinsic Germanium (Ge) semiconductor having \(2.5 \times 10^{29}\) atoms per m3 is doped uniformly by trivalent aluminium at \(1\) ppm. If the thermally generated electron concentration at room temperature is \(n_i=10^{17}\) /m3, the resulting electron concentration after doping at the same temperature will be:
1. \(2.5 \times 10^{29}\) m-3
2. \(4 \times 10^{10}\) m-3
3. \(2.5 \times 10^{18}\) m-3
4. \(4 \times 10^{20}\) m-3
1. \(2.5 \times 10^{29}\) m-3
2. \(4 \times 10^{10}\) m-3
3. \(2.5 \times 10^{18}\) m-3
4. \(4 \times 10^{20}\) m-3
Subtopic: Types of Semiconductors |
69%
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The charge on a \(\mathrm{p}\)-type semiconductor is:
| 1. | neutral |
| 2. | negative |
| 3. | positive |
| 4. | may be positive or negative |
Subtopic: Types of Semiconductors |
71%
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Pure Si at 500 K has equal number of electron and hole concentration of Doping by indium increases to The doped semiconductor is of:
| 1. | n-type with electron concentration \(n_{e}=5\times10^{22}~m^{-3}\) |
| 2. | p-type with electron concentration \(n_{e}=2.5\times10^{23}~m^{-3}\) |
| 3. | n-type with electron concentration \(n_{e}=2.5\times10^{10}~m^{-3}\) |
| 4. | p-type with electron concentration \(n_{e}=5\times10^{9}~m^{-3}\) |
Subtopic: Types of Semiconductors |
69%
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NEET - 2011
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