In the given figure, the potential difference between A and B is:

1.	0	2.	5 volt
3.	10 volt	4.	15 volt

If in a p-n junction, a square input signal of 10 V is applied as shown, then the output across R_L will be:
              

1.		2.
3.		4.

Pure Si at 500 K has equal number of electron $\left(n_{\mathit{e}}\right)$ and hole $\left(n_{\mathit{h}}\right)$ concentration of $1.5\times {10}^{\mathrm{16 }}{\mathrm{m}}^{-3}.$ Doping by indium increases $n_{\mathit{h}}$ to $4.5\times {10}^{22}$ ${\mathrm{m}}^{-3}.$ The doped semiconductor is of:

Carbon, Silicon, and Germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy gaps represented by \(\left(E_g\right)_C,(E_g)_{Si}~\text{and}~(E_g)_{Ge}\) respectively. Which one of the following relationships is true in their case?

In a PN-junction diode:

Two PN-junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be:

A semiconductor is known to have an electron concentration of $8\times {10}^{13}$ cm^-3 and a hole concentration of $5\times {10}^2$ cm^-3. The semiconductor is:

1.  n-type

2.  p-type

3.  intrinsic

4.  insulator

How much is the forbidden gap (approximately) in the energy bands of germanium at room temperature? 
1. \(1.1~\text{eV}\)
2. \(0.1~\text{eV}\)
3. \(0.67~\text{eV}\)
4. \(6.7~\text{eV}\)

In a good conductor, the energy gap between the conduction band and the valence band is
1. Infinite
2. Wide
3. Narrow
4. Zero

A Ge specimen is doped with Al. The concentration of acceptor atoms is $~{10}^{21}$ $\mathrm{atoms}/{\mathrm{m}}^3$. Given that the intrinsic concentration of electron hole pairs is $~{10}^{19}/{\mathrm{m}}^3$, the concentration of electrons in the specimen is: