Select Chapter Topics:
Q. No.The energy band gap of semiconducting material to produce violet (wavelength \(=4000~\mathring{\text{A}}\)) LED is (nearly):
1. \(3~\text{eV}\)
2. \(5~\text{eV}\)
3. \(1~\text{eV}\)
4. \(7~\text{eV}\)
Subtopic: Energy Band theory |
86%
From NCERT
Please attempt this question first.
Hints
Please attempt this question first.
The dynamic resistance of a diode is given by \(R=\frac{26}{i(mA)}~\Omega,\) where \(i\) is the diode current.
| Statement I: | If the current through the diode increases, then the dynamic resistance decreases. |
| Statement II: | If the temperature of the diode is increased, with the potential difference fixed, the dynamic resistance decreases. |
| 1. | Statement I is incorrect and Statement II is correct. |
| 2. | Both Statement I and Statement II are correct. |
| 3. | Both Statement I and Statement II are incorrect. |
| 4. | Statement I is correct and Statement II is incorrect. |
Subtopic: PN junction |
68%
From NCERT
To view explanation, please take trial in the course.
NEET 2023 - Target Batch - Aryan Raj Singh
Hints
To view explanation, please take trial in the course.
NEET 2023 - Target Batch - Aryan Raj Singh
Potential barrier across a p-n junction is \(0.6\) V. Electric field intensity, in the depletion region having a width of \(6\times10^{-6}\) m, will be:
1. \(1\times10^{5}\) N/C
2. \(2\times10^{5}\) N/C
3. \(3\times10^{5}\) N/C
4. \(4\times10^{5}\) N/C
1. \(1\times10^{5}\) N/C
2. \(2\times10^{5}\) N/C
3. \(3\times10^{5}\) N/C
4. \(4\times10^{5}\) N/C
Subtopic: PN junction |
91%
From NCERT
Please attempt this question first.
Hints
Please attempt this question first.
An intrinsic Germanium (Ge) semiconductor having \(2.5 \times 10^{29}\) atoms per m3 is doped uniformly by trivalent aluminium at \(1\) ppm. If the thermally generated electron concentration at room temperature is \(n_i=10^{17}\) /m3, the resulting electron concentration after doping at the same temperature will be:
1. \(2.5 \times 10^{29}\) m-3
2. \(4 \times 10^{10}\) m-3
3. \(2.5 \times 10^{18}\) m-3
4. \(4 \times 10^{20}\) m-3
1. \(2.5 \times 10^{29}\) m-3
2. \(4 \times 10^{10}\) m-3
3. \(2.5 \times 10^{18}\) m-3
4. \(4 \times 10^{20}\) m-3
Subtopic: Types of Semiconductors |
69%
From NCERT
Please attempt this question first.
Hints
Please attempt this question first.
A \(\text{Ge}\) specimen is doped with \(\text{Al}.\) The concentration of acceptor atoms is approximately \(10^{24}\) m-3 Given that intrinsic carrier concentration is nearly \(10^{19}\) m-3, then the concentration of electrons in the specimen is nearly:
1. \(10^{10}\) m-3
2. \(10^{14} \) m-3
3. \(10^{19}\) m-3
4. \(10^{18} \) m-3
1. \(10^{10}\) m-3
2. \(10^{14} \) m-3
3. \(10^{19}\) m-3
4. \(10^{18} \) m-3
Subtopic: Types of Semiconductors |
82%
From NCERT
Please attempt this question first.
Hints
Please attempt this question first.
The depletion width of a \(p-n\) junction depends on which of the following parameters given below?
| a. | temperature |
| b. | type of semiconductor material |
| c. | doping concentration |
| d. | biasing of junction |
| 1. | (a), (b), (c) |
| 2. | (b), (c), (d) |
| 3. | (a), (c), (d) |
| 4. | (a), (b), (c), (d) |
Subtopic: PN junction |
73%
From NCERT
Please attempt this question first.
Hints
Please attempt this question first.
Match List-I with List-II.
| List-I | List-II | ||
| (a) | intrinsic semiconductor | (e) | prepared by adding phosphorus |
| (b) | n-type semiconductor | (f) | the width is nearly one micron |
| (c) | p-type semiconductor | (g) | silicon |
| (d) | depletion layer | (h) | prepared by adding indium |
| 1. | a-g, b-e, c-h, d-f |
| 2. | a-h, b-f, c-e, d-g |
| 3. | a-e, b-g, c-f, d-h |
| 4. | a-f, b-h, c-g, d-e |
Subtopic: Types of Semiconductors |
93%
From NCERT
Please attempt this question first.
Hints
Please attempt this question first.
The charge on a \(\mathrm{p}\)-type semiconductor is:
| 1. | neutral |
| 2. | negative |
| 3. | positive |
| 4. | may be positive or negative |
Subtopic: Types of Semiconductors |
71%
From NCERT
Please attempt this question first.
Hints
Please attempt this question first.
What causes the depletion layer across the p-n junction?
| 1. | drift of holes |
| 2. | drift of electrons |
| 3. | diffusion of holes and electrons |
| 4. | diffusion of neither holes nor electrons |
Subtopic: PN junction |
82%
From NCERT
Please attempt this question first.
Hints
Please attempt this question first.
A full wave rectifier circuit along with the input and output voltages is shown in the figure. The contribution to the output voltage from diode-2 is:
1. A, C
2. B, D
3. B, C
4. A, D
1. A, C
2. B, D
3. B, C
4. A, D
Subtopic: Rectifier |
81%
From NCERT
Please attempt this question first.
Hints
Please attempt this question first.
Select Chapter Topics:
© 2024 GoodEd Technologies Pvt. Ltd.