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Q. No.Specify which of the following type of material might satisfy these descriptions:
A half-filled valence band, an empty conduction band, and an energy gap of \(1\) eV.
1.
conductor
2.
insulator
3.
semiconductor
4.
none of the above
Subtopic: Energy Band theory |
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To make ordinary silicon into a p-type semiconductor, you might add to it:
1. Indium
2. Antimony
3. Germanium
4. Carbon
1. Indium
2. Antimony
3. Germanium
4. Carbon
Subtopic: Types of Semiconductors |
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In a forward-biased \(\mathrm{p\text{-n}}\) junction diode, the potential barrier in the depletion region is of the form of:
| 1. |  |
2. |  |
| 3. |  |
4. |  |
Subtopic: PN junction |
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The electrical circuit used to get smooth dc output from a rectifier circuit is called:
1. logic gate
2. amplifier
3. filter
4. oscillator
1. logic gate
2. amplifier
3. filter
4. oscillator
Subtopic: Rectifier |
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A full wave rectifier circuit along with the input and output voltages is shown in the figure. The contribution to the output voltage from diode-2 is:
1. A, C
2. B, D
3. B, C
4. A, D
1. A, C
2. B, D
3. B, C
4. A, D
Subtopic: Rectifier |
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What causes the depletion layer across the p-n junction?
| 1. | drift of holes |
| 2. | drift of electrons |
| 3. | diffusion of holes and electrons |
| 4. | diffusion of neither holes nor electrons |
Subtopic: PN junction |
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The charge on a \(\mathrm{p}\)-type semiconductor is:
| 1. | neutral |
| 2. | negative |
| 3. | positive |
| 4. | may be positive or negative |
Subtopic: Types of Semiconductors |
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The energy band gap of semiconducting material to produce violet (wavelength \(=4000~\mathring{\text{A}}\)) LED is (nearly):
1. \(3~\text{eV}\)
2. \(5~\text{eV}\)
3. \(1~\text{eV}\)
4. \(7~\text{eV}\)
1. \(3~\text{eV}\)
2. \(5~\text{eV}\)
3. \(1~\text{eV}\)
4. \(7~\text{eV}\)
Subtopic: Energy Band theory |
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The dynamic resistance of a diode is given by \(R=\frac{26}{i(mA)}~\Omega,\) where \(i\) is the diode current.
| Statement I: | If the current through the diode increases, then the dynamic resistance decreases. |
| Statement II: | If the temperature of the diode is increased, with the potential difference fixed, the dynamic resistance decreases. |
| 1. | Statement I is incorrect and Statement II is correct. |
| 2. | Both Statement I and Statement II are correct. |
| 3. | Both Statement I and Statement II are incorrect. |
| 4. | Statement I is correct and Statement II is incorrect. |
Subtopic: PN junction |
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Potential barrier across a p-n junction is \(0.6\) V. Electric field intensity, in the depletion region having a width of \(6\times10^{-6}\) m, will be:
1. \(1\times10^{5}\) N/C
2. \(2\times10^{5}\) N/C
3. \(3\times10^{5}\) N/C
4. \(4\times10^{5}\) N/C
1. \(1\times10^{5}\) N/C
2. \(2\times10^{5}\) N/C
3. \(3\times10^{5}\) N/C
4. \(4\times10^{5}\) N/C
Subtopic: PN junction |
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