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Q. No.A p-n junction diode is connected in a series circuit with a battery (internal resistance \(0.5\) \(\Omega\)) and a \(5\) \(\Omega\) resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. This is because the resistance in the circuit is:
1. \(5\) \(\Omega\)
2. \(5.5\) \(\Omega\)
3. \(10\) \(\Omega\)
4. infinite
Subtopic: PN junction |
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The band gap between the valence band and the conduction band in a certain material is \(3\) eV. What is the longest wavelength of light that can create an electron-hole pair in the material, with the electron in the conduction band and the hole in the valence band? (Take \(hc\)=\(1240\) eV-nm.)
| 1. | \(414\) nm | 2. | \(300\) nm |
| 3. | \(830\) nm | 4. | \(207\) nm |
Subtopic: Energy Band theory |
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The current-voltage characteristic of an ideal \(\mathrm{p \text{-}n}\) junction diode is given by the graph as shown in the following figure:
This diode is connected with a resistance of \(5~\Omega\) in series with it as shown below:
Which of the following shows the dependence of the voltage \(V_{AB}\) and the current \(i\), when the diode is forward-biased? (\(V_{AB}\) in volt, \(i\) in ampere)
This diode is connected with a resistance of \(5~\Omega\) in series with it as shown below:
Which of the following shows the dependence of the voltage \(V_{AB}\) and the current \(i\), when the diode is forward-biased? (\(V_{AB}\) in volt, \(i\) in ampere)
| 1. | \(V_{A B}=i\cdot5+0.6\) |
| 2. | \(V_{A B}=i\cdot5-0.6\) |
| 3. | \(V_{A B}=i\cdot5+(0.6-5)\) |
| 4. | \(V_{A B}=i\cdot5+\left(0.6+5\right)\) |
Subtopic: PN junction |
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Currents flowing in each of the circuits A and B respectively are:
(All the diodes are ideal)
1. \(1\) A, \(2\) A
2. \(2\) A, \(1\) A
3. \(4\) A, \(2\) A
4. \(2\) A, \(4\) A
(All the diodes are ideal)
1. \(1\) A, \(2\) A
2. \(2\) A, \(1\) A
3. \(4\) A, \(2\) A
4. \(2\) A, \(4\) A
Subtopic: PN junction |
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Suitable impurities are added to a semiconductor depending on its use. This is to:
| 1. | increase its electrical resistivity |
| 2. | increase its electrical conductivity |
| 3. | increase its life |
| 4. | enable it to tolerate higher voltage |
Subtopic: Types of Semiconductors |
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In half-wave rectification, if the input frequency is \(60\) Hz, then the output frequency would be:
1. \(120\) Hz
2. zero
3. \(30\) Hz
4. \(60\) Hz
1. \(120\) Hz
2. zero
3. \(30\) Hz
4. \(60\) Hz
Subtopic: Rectifier |
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As the temperature increases, the electrical resistance:
| 1. | decreases for conductors but increases for semiconductors |
| 2. | increases for both conductors and semiconductors |
| 3. | decreases for both conductors and semiconductors |
| 4. | increases for conductors but decreases for semiconductors |
Subtopic: Energy Band theory |
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Given below are two statements:
| Assertion (A): | Thickness of depletion layer is fixed in all semiconductor devices. |
| Reason (R): | No free-charge carriers are available in the depletion layer. |
| 1. | Both (A) and (R) are true and (R) is the correct explanation of (A). |
| 2. | Both (A) and (R) are true but (R) is not the correct explanation of (A). |
| 3. | (A) is true but (R) is false. |
| 4. | (A) is false but (R) is true. |
Subtopic: PN junction |
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In the circuit shown in the figure, \(V_A>V_B.\) Which of the diodes conduct?
| 1. | only \(D_3\) |
| 2. | \(D_1\) and \(D_3\) |
| 3. | all of the diodes |
| 4. | none of the diodes |
Subtopic: PN junction |
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The peak voltage in the output of a half-wave rectifier is \(30 ~\text{V}.\) The rms voltage of the output wave is: (assuming no distortion in wave)
1. \(\frac{30}{\sqrt2}~\text{V}\)
2. \(15 ~\text{V}\)
3. \(\frac{15}{\sqrt2}~\text{V}\)
4. \(10 ~\text{V}\)
1. \(\frac{30}{\sqrt2}~\text{V}\)
2. \(15 ~\text{V}\)
3. \(\frac{15}{\sqrt2}~\text{V}\)
4. \(10 ~\text{V}\)
Subtopic: Rectifier |
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