1. | an anti-particle of electron. |
2. | a vacancy created when an electron leaves a covalent bond. |
3. | absence of free electrons. |
4. | an artificially created particle. |
1. | The resistivity of a semiconductor increases with an increase in temperature. |
2. | Substances with an energy gap of the order of \(10\) eV are insulators. |
3. | In conductors, the valence and conduction bands may overlap. |
4. | The conductivity of a semiconductor increases with an increase in temperature. |
1. | widens the depletion zone. |
2. | increases the number of donors on the n side. |
3. | increases the potential difference across the depletion zone. |
4. | increases the electric field in the depletion zone. |
Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
1. | 2. | ||
3. | 4. |
In semiconductors at room temperature:
1. | The valence band is completely filled and the conduction band is partially filled. |
2. | The valence band is completely filled. |
3. | The conduction band is completely empty. |
4. | The valence band is partially empty and the conduction band is partially filled. |
The peak voltage in the output of a half-wave diode rectifier fed with a sinusoidal signal without a filter is \(10\) V. The DC component of the output voltage is:
1. \(\frac{10}{\pi }\) V
2. \(10\) V
3. \(\frac{20}{\pi }\) V
4. \(\frac{10}{\sqrt{2}}\) V
For the given circuit of the \(\mathrm{p\text-n}\) junction diode, which of the following statements is correct?
1. | In F.B. the voltage across \(R\) is \(V\). |
2. | In R.B. the voltage across \(R\) is \(V\). |
3. | In F.B. the voltage across \(R\) is \(2V\). |
4. | In R.B. the voltage across \(R\) is \(2V\). |
Carbon, silicon, and germanium have four valence electrons each. These are characterized by valence and conduction bands separated by the energy bandgap respectively equal to \((E_g)_C, (E_g)_{Si}~\text{and}~(E_g)_{Ge}\). Which of the following statements is true?
1. | \((E_g)_{Si} < (E_g)_{Ge}<(E_g)_{C}\) |
2. | \((E_g)_{C} < (E_g)_{Ge}>(E_g)_{Si}\) |
3. | \((E_g)_{C} > (E_g)_{Si}>(E_g)_{Ge}\) |
4. | \((E_g)_{C} =(E_g)_{Si}=(E_g)_{Ge}\) |
Reverse-bias applied to a junction diode:
1. | lowers the potential barrier |
2. | raises the potential barrier |
3. | increases the majority carrier current |
4. | increases the minority carrier's current |
The barrier potential of a \(\mathrm{p\text-n}\) junction diode does not depend on:
1. diode design
2. temperature
3. forward bias
4. doping density