In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an: 

     

1.	p-type semiconductor
2.	insulator
3.	metal
4.	n-type semiconductor

The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R₁ will be:
     

A forward-biased diode is treated as:

A half-wave rectifier voltage is fed to a load resistor. For which part of the cycle, the load current will flow?

In the given circuit, PN-junction diodes ${\mathrm{D}}_1,$ ${\mathrm{D}}_2,$ $\mathrm{and}$ ${\mathrm{D}}_3$ are ideal. For the following potential of A and B, the correct increasing order of resistance between A and B will be:

i.  –10V, –5V
ii.  –5V, –10V
iii.  –4V, –12V

1. (i) < (ii) < (iii)
2. (iii) < (ii) < (i)
3. (ii) = (iii) < (i)
4. (i) = (iii) < (ii)

The depletion layer in the P–N junction region is caused by:

Carbon, silicon, and germanium have four valence electrons each. These are characterized by valence and conduction bands separated by the energy bandgap respectively equal to \((E_g)_C, (E_g)_{Si}~\text{and}~(E_g)_{Ge}\). Which of the following statements is true?

In the circuit shown, $I_1 and I_2$ are respectively:
(If diodes are ideal)

1. 0, 0

2. 5 mA, 5 mA

3. 5 mA, 0

4. 0, 5 mA

The \((I-V)\) characteristics of a \(p-n\) junction diode is as shown. If \(R_1\) and \(R_2\) be the dynamic resistance of the   \(p-n\) junction when (i) a forward bias of \(1\) volt is applied and (ii) a forward bias of \(2\) volts is applied respectively, then \(\frac{R_1}{R_2}=?\)

1. \(160\)
2. \(16\)
3. \(1.6\)
4. \(0.16\)

What is the equivalent resistance across the terminals of the battery if the diodes are ideal?