In the circuit shown, $I_1 and I_2$ are respectively:
(If diodes are ideal)

 

1. 0, 0

2. 5 mA, 5 mA

3. 5 mA, 0

4. 0, 5 mA

The depletion layer in the P–N junction region is caused by:

In the given circuit, PN-junction diodes ${\mathrm{D}}_1,$ ${\mathrm{D}}_2,$ $\mathrm{and}$ ${\mathrm{D}}_3$ are ideal. For the following potential of A and B, the correct increasing order of resistance between A and B will be:

i.  –10V, –5V
ii.  –5V, –10V
iii.  –4V, –12V

1. (i) < (ii) < (iii)
2. (iii) < (ii) < (i)
3. (ii) = (iii) < (i)
4. (i) = (iii) < (ii)

The \((I-V)\) characteristics of a \(p-n\) junction diode is as shown. If \(R_1\) and \(R_2\) be the dynamic resistance of the   \(p-n\) junction when (i) a forward bias of \(1\) volt is applied and (ii) a forward bias of \(2\) volts is applied respectively, then \(\frac{R_1}{R_2}=?\)

1. \(160\)
2. \(16\)
3. \(1.6\)
4. \(0.16\)

What is the equivalent resistance across the terminals of the battery if the diodes are ideal?

If in a reverse-biased $p-n$ junction, an increase in carrier concentration takes place due to the creation of new hole-electron pairs by the light of wavelength less than or equal to 620 nm, then the bandgap is:

1. 1 eV

2. 2 eV

3. 20 eV

4. 0.2 eV

What is the reading of the ideal ammeters A₁ and A₂ connected in the given circuit diagram, if $\mathrm{p}-\mathrm{n}$ junction diodes are ideal?

1. 2 A and zero

2. 3 A and 2 A

3. 2 A and 3 A

4. Zero and 2 A

In which of the following condition, diffusion current in $p-n$ junction is more than drift current?

The net charges on $\mathrm{p}$-type semiconductor and $\mathrm{n}$-type semiconductor are, respectively:

1. Positive, negative

2. Negative, positive

3. Positive, positive

4. Zero, zero

The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R₁ will be: