A potential barrier of 0.50 V exists across a p-n junction. If the depletion region is $5.0\times {10}^{-7}$ m wide, the intensity of the electric field in this region is:

1.	\(1.0 \times 10^6 \mathrm{~V} / \mathrm{m}\)	2.	\(1.0 \times 10^5 \mathrm{~V} / \mathrm{m}\)
3.	\(2.0 \times 10^5 \mathrm{~V} / \mathrm{m}\)	4.	\(2.0 \times 10^6 \mathrm{~V} / \mathrm{m}\)

The current through an ideal p-n junction diode shown in the circuit will be:

1.  5 A

2.  0.2 A 

3.  0.6 A

4.  Zero

In a p-n junction diode not connected to any circuit:

When a forward bias is applied to a p-n junction, then what happens to the potential barrier $V_{\mathit{B}}$, and the width of charge depleted region x?

Which of the energy band diagrams shown in the figure corresponds to that of a semiconductor?

1.		2.
3.		4.

For a diode connected in parallel with a resistor, Choose the correct graph between \((I)\) and \((V)\) for the given circuit:

1.		2.
3.		4.

The energy band diagrams for semiconductor samples of silicon are as shown. We can assert that:

The net charges on $\mathrm{p}$-type semiconductor and $\mathrm{n}$-type semiconductor are, respectively:

1. Positive, negative

2. Negative, positive

3. Positive, positive

4. Zero, zero

In which of the following condition, diffusion current in $p-n$ junction is more than drift current?

What is the reading of the ideal ammeters A₁ and A₂ connected in the given circuit diagram, if $\mathrm{p}-\mathrm{n}$ junction diodes are ideal?

1. 2 A and zero

2. 3 A and 2 A

3. 2 A and 3 A

4. Zero and 2 A