In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an: 
      

1. p-type semiconductor
2. insulator
3. metal
4. n-type semiconductor
Subtopic:  Energy Band theory |
 76%
From NCERT
AIPMT - 2007
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Identify the incorrect statement from the following:
1. The resistivity of a semiconductor increases with an increase in temperature.
2. Substances with an energy gap of the order of 10 eV are insulators.
3. In conductors, the valence and conduction bands may overlap.
4. The conductivity of a semiconductor increases with an increase in temperature.
Subtopic:  Energy Band theory |
 81%
From NCERT
AIPMT - 2005
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Carbon, Silicon, and Germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy gaps represented by (Eg)C,(Eg)Si and (Eg)Ge respectively. Which one of the following relationships is true in their case?
1. (Eg)C<(Eg)Ge
2. (Eg)C>(Eg)Si
3. (Eg)C=(Eg)Si
4. (Eg)C<(Eg)Si

Subtopic:  Energy Band theory |
 70%
From NCERT
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p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength:
1. 6000 A˚
2. 4000 nm
3. 6000 nm
4. 4000 A˚  
Subtopic:  Energy Band theory |
 64%
From NCERT
AIPMT - 2009
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A semiconductor is known to have an electron concentration of 8×1013 cm3, and a hole concentration of 5×102 cm3. The semiconductor is:

1. n-type 2. p-type
3. intrinsic 4. insulator
Subtopic:  Types of Semiconductors |
 88%
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C and Si both have the same lattice structure, having 4 bonding electrons in each. However, C is an insulator whereas Si is an intrinsic semiconductor. This is because:
1. in the case of C, the valence band is not completely filled at absolute zero temperature.
2. in the case of C, the conduction band is partly filled even at absolute zero temperature.
3. the four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si, they lie in the third.
4. the four bonding electrons in the case of C lie in the third orbit, whereas for Si, they lie in the fourth orbit.
Subtopic:  Energy Band theory |
 72%
From NCERT
NEET - 2012
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Pure Si at 500 K  has an equal number of electrons (ni) and the hole (nh) concentration of 1.5×1016 m3. Doping by indium increases the hole concentration nh to 4.5×1022 m3. The doped semiconductor is of:
1. n-type with electron concentration ne=5×1022 m3
2. p-type with electron concentration ne=2.5×1023 m3
3. n-type with electron concentration ne=2.5×1010 m3
4. p-type with electron concentration ne=5×109 m3
Subtopic:  Types of Semiconductors |
 71%
From NCERT
NEET - 2011
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If the reverse bias in a junction diode is changed from 5 V to 15 V then the value of current changes from 38 μA to 88 μA. The resistance of the junction diode will be:
1. 4×105 
2. 3×105
3. 2×105
4. 106

Subtopic:  PN junction |
 85%
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The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R1 will be:
       

1. 2.5 A  2. 10.0 A 
3. 1.43 A  4. 3.13 A 
Subtopic:  PN junction |
 88%
From NCERT
NEET - 2016
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What is the reading of the ideal ammeters A1 and A2 connected in the given circuit diagram, if p-n junction diodes are ideal?

    

1. 2 A  and zero 2. 3 A  and 2 A 
3. 2 A  and 3 A  4. Zero and 2 A 


 
Subtopic:  PN junction |
 84%
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