(I) | \(\text{If}~V_i>2~\text{V}, ~\text{then}~V_o = V_i\) |
(II) | \(\text{If}~V_i<2~\text{V}, ~\text{then}~V_o = 2~\text{V}\) |
Statement I: | If the current through the diode increases, then the dynamic resistance decreases. |
Statement II: | If the temperature of the diode is increased, with the potential difference fixed, the dynamic resistance decreases. |
1. | Statement I is incorrect and Statement II is correct. |
2. | Both Statement I and Statement II are correct. |
3. | Both Statement I and Statement II are incorrect. |
4. | Statement I is correct and Statement II is incorrect. |
The barrier potential of a \(\mathrm{p\text{-}n}\) junction depends on:
(a) | type of semiconductor material |
(b) | amount of doping |
(c) | temperature |
Which one of the following is correct?
1. (a) and (b) only
2. (b) only
3. (b) and (c) only
4. (a), (b) and (c)
(a) | |
(b) | |
(c) | |
(d) |
1. (a), (b) and (d)
2. (c) only
3. (a) and (c)
4. (b) and (d)
The LED:
1. | is reverse-biased. |
2. | is forward-biased. |
3. | can be made of \(\mathrm{GaAs}.\) |
4. | both (2) and (3) are correct. |
In an unbiased - junction diode
1. p-type side is at higher potential than n-type side
2. p-type side is at lower potential than n-type side
3. Electric field is directed from side to side
4. Both 2 & 3
The \((I\text-V)\) characteristics of a \(\mathrm{p\text-n}\) junction diode is as shown. If \(R_1\) and \(R_2\) be the dynamic resistance of the \(\mathrm{p\text-n}\) junction when (i) a forward bias of \(1\) volt is applied and (ii) a forward bias of \(2\) volts is applied respectively, then \(\frac{R_1}{R_2}=?\)
1. \(160\)
2. \(16\)
3. \(1.6\)
4. \(0.16\)
1. | 2. | ||
3. | 4. |
i. | in forward bias |
ii. | in reverse bias |
iii. | in parallel with the load |
iv. | in series with the load |
1. | (i) and (ii) are correct |
2. | (ii) and (iii) are correct |
3. | only (i) is correct |
4. | only (iv) is correct |