Which one of the following represents the forward bias diode?

1.  
2.  
3.
4.

Subtopic:  PN junction |
 81%
From NCERT
NEET - 2017
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The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \(R_1\) will be:
   
1. \(2.5~\text{A}\)
2. \(10.0~\text{A}\)
3. \(1.43~\text{A}\)
4. \(3.13~\text{A}\)

Subtopic:  PN junction | Applications of PN junction |
 86%
From NCERT
NEET - 2016
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What is the output \(Y\) in the following circuit, when all the three inputs \(A\), \(B\), and \(C\) are first \(0\) and then \(1\)
                          

1. \(0,1\) 2. \(0,0\)
3. \(1,0\) 4. \(1,1\)

Subtopic:  Logic gates |
 82%
From NCERT
NEET - 2016
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To get output \(Y=1\) for the following circuit, the correct choice for the input is:
  

1. \(A=1,~ B= 0, ~C=0\)
2. \(A=1,~ B= 1, ~C=0\)
3. \(A=1,~ B= 0, ~C=1\)
4. \(A=0,~ B= 1, ~C=0\)

Subtopic:  Logic gates |
 89%
From NCERT
NEET - 2016
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Consider the junction diode as an ideal. The value of current flowing through \(AB\) is: 
   
1. \(10^{-2}~\text{A}\)
2. \(10^{-1}~\text{A}\)
3. \(10^{-3}~\text{A}\)
4. \(0~\text{A}\)

Subtopic:  PN junction |
 77%
From NCERT
NEET - 2016
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In the given figure, a diode \(D\) is connected to an external resistance \(R = 100~\Omega\) and an EMF of \(3.5~\text{V}\). If the barrier potential developed across the diode is \(0.5~\text{V}\), the current in the circuit will be:
  
1. \(30~\text{mA}\)
2. \(40~\text{mA}\)
3. \(20~\text{mA}\)
4. \(35~\text{mA}\)

Subtopic:  PN junction |
 75%
From NCERT
NEET - 2015
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If in a \(\mathrm{p\text{-}n}\) junction, a square input signal of \(10~\text{V}\) is applied as shown, 

 
then the output across \(R_L\) will be:

1. 2.
3. 4.
Subtopic:  PN junction |
 72%
From NCERT
NEET - 2015
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Which logic gate is represented by the following combination of logic gates? 

    
1. \(\mathrm{OR}\)
2. \(\mathrm{NAND}\)
3. \(\mathrm{AND}\)
4. \(\mathrm{NOR}\)
Subtopic:  Logic gates |
 66%
From NCERT
NEET - 2015
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The given graph represents the \(\mathrm{V\text{-} I}\) characteristic for a semiconductor device.

   

Which of the following statement is correct?

1. It is a \(\mathrm{V\text{-} I}\) characteristic for the solar cell where point \(\mathrm{A}\) represents open-circuit voltage and point \(\mathrm{B}\) short circuit current.
2. It is for a solar cell and points \(\mathrm{A}\) and \(\mathrm{B}\) represent open-circuit voltage and current, respectively.
3. It is for a photodiode and points \(\mathrm{A}\) and \(\mathrm{B}\) represent open-circuit voltage and current respectively.
4. It is for a LED and points \(\mathrm{A}\) and \(\mathrm{B}\) represent open circuit voltage and short circuit current, respectively.
Subtopic:  Applications of PN junction |
 75%
From NCERT
AIPMT - 2014
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The barrier potential of a \(\mathrm{p\text{-}n}\) junction depends on: 

(a) type of semiconductor material 
(b) amount of doping 
(c) temperature 

Which one of the following is correct?
1. (a) and (b) only
2. (b) only
3. (b) and (c) only
4. (a), (b) and (c)

Subtopic:  PN junction |
 83%
From NCERT
NEET - 2014
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