Q. No.In a p–n junction photocell, the value of the photo electromotive force produced by monochromatic light is proportional to:
1.
the intensity of the light falling on the cell.
2.
the frequency of the light falling on the cell.
3.
the voltage applied at the p–n junction.
4.
the barrier voltage at the p–n junction.
The output of the OR gate is \(1\):
| 1. | if either or both inputs are \(1.\) |
| 2. | only if both inputs are \(1.\) |
| 3. | if either input is zero |
| 4. | if both inputs are zero |
What is the correct statement regarding a p-n junction:
| 1. | high potential at the n side and low potential at the p side |
| 2. | high potential at the p side and low potential at the n side |
| 3. | p and n both are at the same potential |
| 4. | undetermined |
The given truth table is for which logic gate:
| A | B | Y |
| \(1\) | \(1\) | \(0\) |
| \(0\) | \(1\) | \(1\) |
| \(1\) | \(0\) | \(1\) |
| \(0\) | \(0\) | \(1\) |
1. NAND
2. XOR
3. NOR
4. OR
For the given circuit of the P-N junction diode, which of the following statements is correct?
| 1. | In F.B. the voltage across R is V. |
| 2. | In R.B. the voltage across R is V. |
| 3. | In F.B. the voltage across R is 2V. |
| 4. | In R.B. the voltage across R is 2V. |
The following truth table represent which logic gate:
| A | B | C |
| 1 | 1 | 0 |
| 0 | 1 | 1 |
| 1 | 0 | 1 |
| 0 | 0 | 1 |
1. XOR
2. NOT
3. NAND
4. AND
The current \((I)\) in the circuit will be:
1. \(\frac{5}{40}~\text{A}\)
2. \(\frac{5}{50}~\text{A}\)
3. \(\frac{5}{10}~\text{A}
\)
4. \(\frac{5}{20}~\text{A}\)
Reverse-bias applied to a junction diode:
| 1. | lowers the potential barrier |
| 2. | raises the potential barrier |
| 3. | increases the majority carrier current |
| 4. | increases the minority carrier's current |
If a full-wave rectifier circuit is operating from \(50~\text{Hz}\) mains, the fundamental frequency in the ripple will be:
1. \(25~\text{Hz}\)
2. \(50~\text{Hz}\)
3. \(70.7~\text{Hz}\)
4. \(100~\text{Hz}\)
The barrier potential of a p-n junction diode does not depend on:
1. diode design
2. temperature
3. forward bias
4. doping density
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