In an \(\mathrm{n\text{-}}\)type silicon, which of the following statement is true:

1. Electrons are majority carriers and trivalent atoms are the dopants.
2. Electrons are minority carriers and pentavalent atoms are the dopants.
3. Holes are minority carriers and pentavalent atoms are the dopants.
4. Holes are majority carriers and trivalent atoms are the dopants.

Subtopic:  Types of Semiconductors |
 77%
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Carbon, silicon, and germanium have four valence electrons each. These are characterized by valence and conduction bands separated by the energy bandgap respectively equal to \((E_g)_C, (E_g)_{Si}~\text{and}~(E_g)_{Ge}\). Which of the following statements is true?

1. \((E_g)_{Si} < (E_g)_{Ge}<(E_g)_{C}\)
2. \((E_g)_{C} < (E_g)_{Ge}>(E_g)_{Si}\)
3. \((E_g)_{C} > (E_g)_{Si}>(E_g)_{Ge}\)
4. \((E_g)_{C} =(E_g)_{Si}=(E_g)_{Ge}\)
 

Subtopic:  Energy Band theory |
 70%
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In an unbiased p-n junction, holes diffuse from the p-region to n-region because :

1. free electrons in the n-region attract them.
2. they move across the junction by the potential difference.
3. hole concentration in p-region is more as compared to n-region.
4. All the above.

Subtopic:  Types of Semiconductors |
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When a forward bias is applied to a p-n junction, it

1. raises the potential barrier.
2. reduces the majority carrier current to zero.
3. lowers the potential barrier.
4. None of the above.

Subtopic:  PN junction |
 80%
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In a half-wave rectification, what is the output frequency if the input frequency is \(50\) Hz?
1. \(50~\text{Hz}\)
2. \(100~\text{Hz}\)
3. \(25~\text{Hz}\)
4. \(60~\text{Hz}\)

Subtopic:  Rectifier |
 70%
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A p-n photodiode is fabricated from a semiconductor with a bandgap of \(2.8\) eV. The energy of the incident photon with a wavelength of \(6000\) nm is:
1. \(0.207\) eV
2. \(0.270\) eV
3. \(0.027\) eV
4. \(0.072\) eV

Subtopic:  PN junction |
 61%
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The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. The number of holes is: (Given that ni=1.5×1016 m-3)

1. \(4.51\times 10^{9}\)
2. \(4.99\times 10^{22}\)
3. \(1.56\times 10^{22}\)
4. \(3.33\times 10^{23}\)

Subtopic:  PN junction |
 54%
From NCERT
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In an intrinsic semiconductor, the energy gap Eg is 1.2eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration ni is given by, 

ni=n0exp-Eg2KBT where n0 is a constant.

1. \(1.01\times10^6:1\)
2. \(1.09\times10^5:1\)
3. \(1:1\)
4. \(1:2\)

Subtopic:  Energy Band theory |
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Which statement is true for the given circuit:

1. (a) is OR gate and (b) is NOT gate.
2. (a) is NOT gate and (b) is OR gate.
3. (a) is AND gate and (b) is OR gate.
4. (a) is OR gate and (b) is AND gate.

Subtopic:  Logic gates |
 73%
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A NAND gate connected as given in the figure,

The circuit operates like a:

1. NOT gate
2. OR gate
3. AND gate
4. None of these

Subtopic:  Logic gates |
 69%
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