1. | Forward biasing | 2. | Reverse biasing |
3. | No biasing | 4. | All of these |
1. \(2\) A and zero
2. \(3\) A and \(2\) A
3. \(2\) A and \(3\) A
4. zero and \(2\) A
If in a reverse-biased \(\mathrm{p\text-n}\) junction, an increase in carrier concentration takes place due to the creation of new hole-electron pairs by the light of wavelength less than or equal to \(620\) nm, then the bandgap is:
1. \(1\) eV
2. \(2\) eV
3. \(20\) eV
4. \(0.2\) eV
1. | 2. | ||
3. | 4. |
1. | It requires a low operational voltage. |
2. | It has a fast on-off switching capability. |
3. | The bandwidth of the emitted light is \(100\) A to \(10000\) A. |
4. | It does not require warm-up time. |
A combination of logic gates is shown in the circuit. If \(A\) is at \(0\) V and \(B\) is at \(5\) V, then the potential of \(R\) is:
1. | \(0\) V | 2. | \(5\) V |
3. | \(10\) V | 4. | Any of these |
How many minimum number of NOR gates are required to obtain an AND gate?
1. One
2. Two
3. Three
4. Five
The circuit shown below is an electrical analogue for which of the following logic gates?
1. AND gate
2. OR gate
3. NOT gate
4. NOR gate
What is the equivalent resistance across the terminals of the battery if the diodes are ideal?
1. | \(10~ \Omega\) | 2. | \(20~ \Omega\) |
3. | \(15~ \Omega\) | 4. | \({10\over3} ~ \Omega\) |
What is the name of the logic gate represented by the following symbol?
1. NOR
2. OR
3. NAND
4. AND