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In an unbiased - junction diode
1. p-type side is at higher potential than n-type side
2. p-type side is at lower potential than n-type side
3. Electric field is directed from side to side
4. Both 2 & 3
The \((I\text-V)\) characteristics of a \(\mathrm{p\text-n}\) junction diode is as shown. If \(R_1\) and \(R_2\) be the dynamic resistance of the \(\mathrm{p\text-n}\) junction when (i) a forward bias of \(1\) volt is applied and (ii) a forward bias of \(2\) volts is applied respectively, then \(\frac{R_1}{R_2}=?\)
1. \(160\)
2. \(16\)
3. \(1.6\)
4. \(0.16\)
The LED:
1. is reverse-biased.
2. is forward-biased.
3. can be made of \(\mathrm{GaAs}\).
4. both (2) & (3) are correct.
The barrier potential of a \(\mathrm{p\text{-}n}\) junction depends on:
(a) | type of semiconductor material |
(b) | amount of doping |
(c) | temperature |
Which one of the following is correct?
1. (a) and (b) only
2. (b) only
3. (b) and (c) only
4. (a), (b) and (c)
(a) | |
(b) | |
(c) | |
(d) |
1. (a), (b) and (d)
2. (c) only
3. (a) and (c)
4. (b) and (d)
Assertion (A): | The resistance of a photodiode decreases when light having photons of sufficient energy is incident on it. |
Reason (R): | When energetic photons fall on the \(\mathrm{p\text{-}n}\) junction of a photodiode, electron-hole pairs are created due to the breaking of the valence bonds. |
1. | (A) is True but (R) is False. |
2. | (A) is False but (R) is True. |
3. | Both (A) and (R) are True and (R) is the correct explanation of (A). |
4. | Both (A) and (R) are True but (R) is not the correct explanation of (A). |
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