Silicon doped with electron rich impurity forms -

1. p-type semiconductor.

2. n-type semiconductor.

3. Intrinsic semiconductor.

4. Insulator.

Subtopic:  Imperfections in Solids & Semiconductors |
 83%
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The incorrect statement among the following is:

1. Paramagnetic substances are weakly attracted by magnetic field.
2. Ferromagnetic substances cannot be magnetised permanently.
3. The domains in antiferromagnetic substances are oppositely oriented with respect to each other.
4. Pairing of electrons cancels their magnetic moment in the diamagnetic substances.

Subtopic:  Magnetic Behaviour of an Element/Compound |
 77%
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A ferromagnetic substance becomes a permanent magnet when it is placed in a magnetic field because:

1. All the domains get oriented in the direction of the magnetic field.
2. All the domains get oriented in the direction opposite to the direction of the magnetic field.
3. Domains get oriented randomly.
4. Domains are not affected by the magnetic field.

Subtopic:  Magnetic Behaviour of an Element/Compound |
 80%
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The correct order of the packing efficiency in different types of unit cells is-

1.  Fcc < Bcc < Simple cubic

2.  Fcc > Bcc > Simple cubic

3.  Fcc < Bcc > Simple cubic

4.  Bcc < Fcc > Simple cubic

Subtopic:  Density & Packing Fraction |
 86%
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Dislocation defect is also known as-

1. Frenkel defect.

2. Schottky defect.

3. Non-stoichiometric defect.

4. Simple interstitial defect.

Subtopic:  Imperfections in Solids & Semiconductors |
 80%
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The edge lengths of the unit cells in terms of the radius of spheres constituting fcc, bcc, and simple cubic unit cells are respectively -

1. 22r, 4r3, 2r

2. 4r3, 22r, 2r

3. 2r, 22r, 4r3

4. 2r, 4r3, 22r

Subtopic:  Voids, Radius Ratio & Coordination Number |
 81%
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Correct statement among the following regarding conductivity in solids is -

1.   κmetals  κinsulators < κsemiconductors

2.   κmetals  κinsulators < κsemiconductors

3.   κmetals , κsemiconductors > κinsulators = zero

4.  κmetals < κsemiconductors > κinsulators  zero

Subtopic:  Imperfections in Solids & Semiconductors |
 69%
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Consider the following statements about semiconductors.

I. Silicon doped with electron-rich impurity is a p-type semiconductor.
II. Silicon doped with an electron-rich impurity is an n-type semiconductor.
III. Delocalised electrons increase the conductivity of doped silicon.
IV. An electron vacancy increases the conductivity of n-type semiconductor.
The correct statements about semiconductors are: 

1. I and II

2. II and III

3. III and IV

4. I and IV

Subtopic:  Magnetic Behaviour of an Element/Compound |
 85%
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Match the defects given in Column I with the statements given in Column II.

Column I Column II
A. Simple vacancy defect 1. Shown by non-ionic solids and increases the density of the solid
B. Simple interstitial defect 2. Shown by ionic solids and decreases the density of the solid
C. Frenkel defect 3. Shown by non-ionic solids and decreases the density of the solid
D. Schottky defect 4. Shown by ionic solids and density of the solid remains the same

Codes

A B C D
1. 3 1 4 2
2. 1 2 3 4
3. 1 4 3 2
4. 4 1 3 2

Subtopic:  Imperfections in Solids & Semiconductors |
 82%
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Match the types of defects given in Column I with the statement given in Column II.

Column I Column II
A. Impurity defect 1. NaCl with anionic sites called F-centres
B. Metal excess defect 2. FeO with Fe3+
C. Metal deficiency defect 3. NaCl with Sr2+ and some cationic sites vacant

Codes

A B C
1. 2 3 1
2. 3 1 2
3 1 2 3
4. 2 1 3
Subtopic:  Imperfections in Solids & Semiconductors |
 73%
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