| 1. | Widths of depletion region on either side of the interface are equal |
| 2. | The depletion region widths is more on \(\mathrm{p\text-}\)side compared to that in \(\mathrm{n\text-}\)side |
| 3. | The depletion region widths is more on \(\mathrm{n\text-}\)side compared to that in \(\mathrm{p\text-}\)side |
| 4. | No depletion region forms because of unequal doping concentrations on \(\mathrm{p}\) and \(\mathrm{n\text-}\)sides |


| (A) | Total resistance of circuit is \(6~\Omega\) |
| (B) | Current in Ammeter is \(1~\text A\) |
| (C) | Potential across AB is \(4~\text {Volts}\) |
| (D) | Potential across CD is \(4~\text {Volts}\) |
| (E) | Total resistance of the circuit is \(8~\Omega\) |


| 1. | ![]() |
2. | ![]() |
| 3. | ![]() |
4. | ![]() |
In the circuit shown below, a \(\mathrm{Si}\) diode and a \(\mathrm{Ge}\) diode are connected in series with resistors of \(2.5~\text{k}\Omega\) and \(2.5~\text{k}\Omega,\) across a \(15 ~\text V\) supply. If the forward voltage drops of the \(\mathrm{Si}\) and \(\mathrm{Ge}\) diodes are \(0.7 ~\text V\) and \(0.3 ~\text V,\) respectively, what is the potential difference across the \(2.5~\text{k}\Omega\) resistor?

| 1. | \(9.25~\text{V}\) | 2. | \(6.25~\text{V}\) |
| 3. | \(8.75~\text{V}\) | 4. | \(9.75~\text{V}\) |
| (i) | ![]() |
| (ii) | ![]() |
| (iii) | ![]() |
| (iv) | ![]() |
| 1. | (ii) | 2. | (i) and (iv) |
| 3. | (iv) | 4. | (i) |
| 1. | \(12~ \Omega \) | 2. | \(36~ \Omega \) |
| 3. | \(20~ \Omega \) | 4. | \(6~ \Omega \) |