In a semiconductor \(\mathrm{p\text-n}\) diode, the doping concentrations on \(\mathrm{p\text-}\)side and \(\mathrm{n\text-}\)side are \(10^{15}~\text{atoms/cm}^3\) and \(10^{18}~\text{atoms/cm}^3\), respectively. Which one of the following statements is true?
1. Widths of depletion region on either side of the interface are equal 
2. The depletion region widths is more on \(\mathrm{p\text-}\)side compared to that in \(\mathrm{n\text-}\)side
3. The depletion region widths is more on \(\mathrm{n\text-}\)side compared to that in \(\mathrm{p\text-}\)side
4. No depletion region forms because of unequal doping concentrations on \(\mathrm{p}\) and \(\mathrm{n\text-}\)sides
Subtopic:  PN junction |
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Consider a circuit consisting of a capacitor \((20 ~\mu \text{F})\), resistor (\(100~\Omega\)) and two identical diodes as shown in figure. The resistance of diode under forward biasing condition is \(10~\Omega\). The time constant of the circuit is \(\alpha\times10^{-3}~\text{s}\). The value of \(\alpha\) is: 
                
1. \(2.2\)
2. \(2.0\)
3. \(2.1\)
4. \(2.4\)
Subtopic:  PN junction |
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Assuming in forward bias condition there is a voltage drop of \(0.7~\text{V}\) across a silicon diode, the current through diode \(\mathrm D_1\) in the circuit is: (in mA) ( Assume all diodes in the given circuit are identical) 
   
1. \(20.15\)
2. \(11.7\)
3. \(17.6\)
4. \(18.8\)
Subtopic:  PN junction |
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Level 3: 35%-60%
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Two \(\mathrm{p\text-n}\) junction diodes \(D_1\) and \(D_2\) are connected as shown in figure. \(A\) and \(B\) are input signals and \(C\) is the output. The given circuit will function as a: 
          
1. OR Gate
2. NOR Gate
3. NAND Gate
4. AND Gate
Subtopic:  PN junction |
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Refer to the circuit diagram given in the figure. Which of the following observations are correct?
(A) Total resistance of circuit is \(6~\Omega\)
(B) Current in Ammeter is \(1~\text A\)
(C) Potential across AB is \(4~\text {Volts}\)
(D) Potential across CD is \(4~\text {Volts}\)
(E) Total resistance of the circuit is \(8~\Omega\)
Choose the correct answer from the options given below: 

1. (B), (C) and (E) only
2. (A), (B) and (D) only
3. (A), (C) and (D) only
4. (A), (B) and (C) only
Subtopic:  PN junction |
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Level 1: 80%+
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Which of the following circuits represents a forward biased diode?

Choose the correct answer from the options given below:
1. (B), (C) and (E) only
2. (C) and (E) only
3. (B), (D) and (E) only
4. (A) and (D) only
Subtopic:  PN junction |
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Which of the diode circuit shows correct biasing used for the measurement of dynamic resistance of p-n junction diode –
1. 2.
3. 4.

 
Subtopic:  PN junction |
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Level 1: 80%+
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In the circuit shown below, a \(\mathrm{Si}\) diode and a \(\mathrm{Ge}\) diode are connected in series with resistors of \(2.5~\text{k}\Omega\) and \(2.5~\text{k}\Omega,\) across a \(15 ~\text V\) supply. If the forward voltage drops of the \(\mathrm{Si}\) and \(\mathrm{Ge}\) diodes are \(0.7 ~\text V\) and \(0.3 ~\text V,\) respectively, what is the potential difference across the \(2.5~\text{k}\Omega\) resistor?

1. \(9.25~\text{V}\) 2. \(6.25~\text{V}\)
3. \(8.75~\text{V}\) 4. \(9.75~\text{V}\)
Subtopic:  PN junction |
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In which of the following circuits the diode is reverse-biased?
(i)
(ii)
(iii)
(iv)
 
1. (ii) 2. (i) and (iv)
3. (iv) 4. (i)
Subtopic:  PN junction |
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Consider the network shown in the figure where the diodes are ideal: a \(15~\Omega\) resistor is connected in the top branch, a \(10~\Omega\) resistor in series with a diode is in the middle branch, and a \(5~\Omega\) resistor in series with a diode is in the bottom branch, with the left terminal connected to \(+6~\text{V}\) and the right terminal connected to \(-8~\text{V}.\) What is the equivalent resistance of the network between the two terminals?
1. \(12~ \Omega \) 2. \(36~ \Omega \)
3. \(20~ \Omega \) 4. \(6~ \Omega \)
Subtopic:  PN junction |
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Level 1: 80%+
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