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Q. No.The temperature dependence of resistances of \(\mathrm{Cu}\) and undoped \(\mathrm{Si}\) in the temperature range \(300\text-400~\text{K}\), is best described by:
| 1. | Linear increase for \(\mathrm{Cu}\), linear increase for \(\mathrm{Si}\) |
| 2. | Linear increase for \(\mathrm{Cu}\), exponential increase for \(\mathrm{Si}\) |
| 3. | Linear increase for \(\mathrm{Cu}\), exponential decrease for \(\mathrm{Si}\) |
| 4. | Linear decrease for \(\mathrm{Cu}\), linear decrease for \(\mathrm{Si}\) |
Subtopic: Types of Semiconductors |
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Level 2: 60%+
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What is the conductivity of a semiconductor sample having electron concentration of \(5\times10^{18}~\text{m}^{-3},\) hole concentration of \(5\times10^{19}~\text{m}^{-3},\) electron mobility of \(2.0~\text{m}^2~\text{V}^{-1}\text{s}^{-1}\) and hole mobility of \(0.01~\text{m}^2\text{V}^{-1}~\text{s}^{-1}?\)
(Take charge of an electron as \(1.6\times10^{-19}~\text{C})\)
1. \(0.59~(\Omega\text-\text{m})^{-1}\)
2. \(1.20~(\Omega\text-\text{m})^{-1}\)
3. \(1.68~(\Omega\text-\text{m})^{-1}\)
4. \(1.83~(\Omega\text-\text{m})^{-1}\)
(Take charge of an electron as \(1.6\times10^{-19}~\text{C})\)
1. \(0.59~(\Omega\text-\text{m})^{-1}\)
2. \(1.20~(\Omega\text-\text{m})^{-1}\)
3. \(1.68~(\Omega\text-\text{m})^{-1}\)
4. \(1.83~(\Omega\text-\text{m})^{-1}\)
Subtopic: Types of Semiconductors |
69%
Level 2: 60%+
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What is the current through the zener diode if its breakdown voltage is \(5~\text V?\)
1. \(58.33 ~\text{mA}\)
2. \(25 ~\text{mA}\)
3. \(28.33 ~\text{mA}\)
4. \(20.33 ~\text{mA}\)
1. \(58.33 ~\text{mA}\)
2. \(25 ~\text{mA}\)
3. \(28.33 ~\text{mA}\)
4. \(20.33 ~\text{mA}\)
Subtopic: Types of Semiconductors |
62%
Level 2: 60%+
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An intrinsic semiconductor has a charge carrier density of \(1.5\times10^{16}~\text{m}^{-3}\) at \(27^\circ\text{C}.\) After doping with an impurity, the hole density rises to \(4.5\times10^{22}~\text{m}^{-3}.\) What is the electron density in the doped semiconductor?
1. \(5×10^9~\text{m}^{−3}\)
2. \(7\times10^9~\text{m}^{−3}\)
3. \(13×10^9~\text{m}^{−3}\)
4. \(2×10^9~\text{m}^{−3}\)
1. \(5×10^9~\text{m}^{−3}\)
2. \(7\times10^9~\text{m}^{−3}\)
3. \(13×10^9~\text{m}^{−3}\)
4. \(2×10^9~\text{m}^{−3}\)
Subtopic: Types of Semiconductors |
81%
Level 1: 80%+
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| Statement-I: | By doping silicon semiconductors with pentavalent material, the electron density increases. |
| Statement-II: | The n-type semiconductors have a net negative charge. In the light of the above statements, choose the most appropriate answer from the options given below : |
| 1. | Both Statement I and Statement II are true. |
| 2. | Statement I is true but Statement II is false. |
| 3. | Statement I is false but Statement II is true. |
| 4. | Both Statement I and Statement II are false. |
Subtopic: Types of Semiconductors |
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Level 2: 60%+
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Consider a \(\mathrm{n\text-}\)type semiconductor in which \(\mathrm{n}_\mathrm{e}\) and \(\mathrm{n_h}\) are number of electrons and holes, respectively.
Choose the correct answer from the options given below:
| \(\mathrm{A}.\) | Holes are minority carriers |
| \(\mathrm{B}.\) | The dopant is a pentavalent atom |
| \(\mathrm{C}.\) | \(\mathrm{n}_{\mathrm{e}} \mathrm{n}_{\mathrm{h}} \neq \mathrm{n}_{\mathrm{i}}^2\) (where \(\mathrm{n_i} \) is number of electrons or holes in semiconductor when it is intrinsic form) |
| \(\mathrm{D}.\) | \(\mathrm{n}_{\mathrm{e}} \mathrm{n}_{\mathrm{h}} \geqslant \mathrm{n}_{\mathrm{i}}^2\) |
| \(\mathrm{E}.\) | The holes are not generated due to the donors |
| 1. | \(\mathrm{A,B,C}~\text{only}\) | 2. | \(\mathrm{A,C, D}~\text{only}\) |
| 3. | \(\mathrm{A,C,E}~\text{only}\) | 4. | \(\mathrm{A,B,E}~\text{only}\) |
Subtopic: Types of Semiconductors |
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Level 2: 60%+
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