Q. No.A potential barrier of \(0.3~\text{V}\) exists across a p-n junction. If depletion region is \(1~ \mu \text{m}\) wide, then the intensity of
electric field in this region is:
1. \(2 \times 10^5 ~\text {V/m}\)
2. \(3 \times 10^5 ~\text {V/m}\)
3. \(4 \times 10^5 ~\text {V/m}\)
4. \(5 \times 10^5 ~\text {V/m}\)
electric field in this region is:
1. \(2 \times 10^5 ~\text {V/m}\)
2. \(3 \times 10^5 ~\text {V/m}\)
3. \(4 \times 10^5 ~\text {V/m}\)
4. \(5 \times 10^5 ~\text {V/m}\)
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Choose the correct statement among the following:
| 1. | The current under reverse bias is almost voltage independent upto critical reverse bias voltage. |
| 2. | For diode in reverse bias, the potential barrier increases. |
| 3. | For diode in forward bias, the potential barrier reduces. |
| 4. | All of these |
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What happens to the width of the depletion layer of p-n junction in forward biasing?
| 1. | it increases. |
| 2. | it decreases. |
| 3. | it remains fixed. |
| 4. | may increase or decrease. |
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A \(2~\text V\) battery is connected across \({AB}\) as shown in the figure. The value of the current supplied by the battery when in one case battery's positive terminal is connected to \(A\) and in another case when the positive terminal of the battery is connected to \({B}\) will respectively be:
1. \(0.4~\text{A}\) and \(0.2~\text{A}\)
2. \(0.2~\text{A}\) and \(0.4~\text{A}\)
3. \(0.1~\text{A}\) and \(0.2~\text{A}\)
4. \(0.2~\text{A}\) and \(0.1~\text{A}\)
1. \(0.4~\text{A}\) and \(0.2~\text{A}\)
2. \(0.2~\text{A}\) and \(0.4~\text{A}\)
3. \(0.1~\text{A}\) and \(0.2~\text{A}\)
4. \(0.2~\text{A}\) and \(0.1~\text{A}\)
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An electrical device which offers a low resistance to the current in one direction but high resistance to the current in the opposite direction is called:
1. resistor
2. capacitor
3. inductor
4. diode
1. resistor
2. capacitor
3. inductor
4. diode
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In the circuit shown in the figure, \(D_1,D_2\) are ideal diodes.
If the resistance of the circuit is measured in the forward direction \((\text{i.e.,}V_A>V_B)\) then it is \(R_1\) and in the reverse direction \((\text{i.e.,}V_A<V_B)\) then it is \(R_2.\) The values of \(R_1,R_2\) are:
If the resistance of the circuit is measured in the forward direction \((\text{i.e.,}V_A>V_B)\) then it is \(R_1\) and in the reverse direction \((\text{i.e.,}V_A<V_B)\) then it is \(R_2.\) The values of \(R_1,R_2\) are:
| 1. | \(200~\Omega,100~\Omega\) | 2. | \(300~\Omega,200~\Omega\) |
| 3. | \(150~\Omega,150~\Omega\) | 4. | \(167~\Omega,167~\Omega\) |
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Testing a good diode with a multimeter should indicate:
| 1. | high resistance when forward or reverse biased. |
| 2. | low resistance when forward or reverse biased. |
| 3. | high resistance when reverse biased and low resistance when forward biased. |
| 4. | high resistance when forward biased and low resistance when reverse biased. |
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In case of \(p-n\) junction diode, at a high value of reverse bias voltage the current rises sharply. The value of this reverse voltage is known as:
| 1. | cut-in-voltage |
| 2. | break down voltage |
| 3. | cut-off voltage |
| 4. | inverse voltage |
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In which circuit will the ammeter show no current flow? (assume the diodes are ideal)
| 1. |  |
2. |  |
| 3. |  |
4. |  |
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A junction diode exhibits a resistance of \(25~ \Omega\) in the forward-biased condition and \(25000 ~\Omega\) in the reverse-biased condition. Based on the given circuit configuration, what will be the current flowing through the diode?
| 1. | \(\dfrac{1}{7}\) A | 2. | \(\dfrac{1}{6}\) A |
| 3. | \(\dfrac{1}{25}\) A | 4. | \(\dfrac{1}{180}\) A |
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