A. | For a solar-cell, the \(I\text-V\) characteristics lies in the IV quadrant of the given graph. |
B. | In a reverse-biased pn junction diode, the current measured in (\(\mu \text{A}\)), is due to majority charge carriers. |
1. | A is incorrect but B is correct. |
2. | Both A and B are correct. |
3. | Both A and B are incorrect. |
4. | A is correct but B is incorrect. |
\(A\) | \(B\) | \(Y\) |
0 0 1 1 |
0 1 0 1 |
1 0 1 0 |
1. | \(\text{NOR}\) gate | 2. | \(\text{OR}\) gate |
3. | \(\text{AND}\) gate | 4. | \(\text{NAND}\) gate |
1. | 2. | ||
3. | 4. |
1. | forward biased zener diode. |
2. | type of light-emitting diode. |
3. | diode working on the principle of photo-voltaic effect. |
4. | type of photo-diode with external biasing. |
1. | \(A=1,B=1,Y=1\) |
2. | \(A=0,B=1,Y=1\) |
3. | \(A=1,B=0,Y=0\) |
4. | \(A=0,B=0,Y=1\) |
1. | in forward bias only. |
2. | in reverse bias only. |
3. | as a voltage regulator in forward bias and as a simple pn junction diode in reverse bias. |
4. | as a voltage regulator in reverse bias and as a simple pn junction diode in forward bias. |