A. | For a solar-cell, the I-V characteristics lies in the IV quadrant of the given graph. |
B. | In a reverse-biased pn junction diode, the current measured in (μA), is due to majority charge carriers. |
1. | A is incorrect but B is correct. |
2. | Both A and B are correct. |
3. | Both A and B are incorrect. |
4. | A is correct but B is incorrect. |
A | B | Y |
0 0 1 1 |
0 1 0 1 |
1 0 1 0 |
1. | ![]() |
2. | ![]() |
3. | ![]() |
4. | ![]() |
1. | forward biased Zener diode. |
2. | type of light-emitting diode. |
3. | diode working on the principle of photo-voltaic effect. |
4. | type of photo-diode with external biasing. |
1. | A=1,B=1,Y=1 |
2. | A=0,B=1,Y=1 |
3. | A=1,B=0,Y=0 |
4. | A=0,B=0,Y=1 |
1. | in forward bias only. |
2. | in reverse bias only. |
3. | as a voltage regulator in forward bias and as a simple pn junction diode in reverse bias. |
4. | as a voltage regulator in reverse bias and as a simple pn junction diode in forward bias. |
1. | Light-emitting diode | 2. | Zener diode |
3. | Photodiode | 4. | Solar cell |
1. | A⋅B | 2. | ¯A⋅¯B |
3. | A+B | 4. | ¯A+¯B |