NCERT Exemplar (Objective) Based MCQs Semiconductor Electronics Physics NEET Practice Questions, MCQs, Past Year Questions (PYQs), NCERT Questions, Question Bank, Class 11 and Class 12 Questions, and PDF solved with answers

The conductivity of a semiconductor increases with an increase in temperature,
because:

1.	number density of free current carries increases
2.	relaxation time increases
3.	both number density of carries and relaxation time increase
4.	number density of current carriers increases, relaxation time decreases but the effect of decrease in relaxation time is much less than the increase in number density

Subtopic: Energy Band theory |

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Q2:

In figure given below $V_0$ is the potential barrier across a $\mathrm{p\text-n}$ junction, when no battery is connected across the junction.

1.	$1$ and $3$ both correspond to forward bias of junction.
2.	$3$ corresponds to forward bias of junction and $1$ corresponds to reverse bias of junction.
3.	$1$ corresponds to forward bias and $3$ corresponds to reverse bias of junction.
4.	$3$ and $1$ both correspond to reverse bias of junction.

Subtopic: PN junction |

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Q3:

In the figure given below, assuming the diodes to be ideal,

1.	$D_1$ is forward biased and $D_2$ is revers-biased and hence current flows from $A$ to $B$.
2.	$D_2$ is forward biased and $D_1$ is reverse-biased and hence no current flows from $B$ to $A$ and vice-versa.
3.	$D_1$ and $D_2$ are both forward-biased and hence current flows from $A$ to $B$.
4.	$D_1$ and $D_2$ are both reverse-biased and hence no current flows from $A$ to $B$ and vice-versa.

Subtopic: PN junction |

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Q4:

A $220~\text{V}$ AC supply is connected between points $A$ and $B$ (figure). What will be the potential difference $V$ across the capacitor?

1.	$220~\text{V}$	2.	$110~\text{V}$
3.	$0~\text{V}$	4.	$220\sqrt{2}~\text{V}$

Subtopic: PN junction |

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Q5:

Hole is:

1.	an anti-particle of electron.
2.	a vacancy created when an electron leaves a covalent bond.
3.	absence of free electrons.
4.	an artificially created particle.

Subtopic: Types of Semiconductors |

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Q6:

The output of the given circuit in figure given below,

1.	would be zero at all times.
2.	would be like a half wave rectifier with positive cycles in output.
3.	would be like a half wave rectifier with negative cycles in output.
4.	would be like that of a full wave rectifier.

Subtopic: PN junction |

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Q7:

In the circuit shown in the figure given below, if the diode forward voltage drop is $0.3~\text V,$ the voltage difference between $A$ and $B$ is:

1.	$1.3~\text V$	2.	$2.3~\text V$
3.	$0$	4.	$0.5~\text V$

Subtopic: PN junction |

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Q8:

Truth table for the given circuit is:

1. $A B E$
$\begin{matrix} 0 & 0 & 1 \\ 0 & 1 & 0 \\ 1 & 0 & 1 \\ 1 & 1 & 0 \end{matrix}$

2. $A B E$
$\begin{matrix} 0 & 0 & 1 \\ 0 & 1 & 0 \\ 1 & 0 & 0 \\ 1 & 1 & 0 \end{matrix}$

3. $A B E$
$\begin{matrix} 0 & 0 & 0 \\ 0 & 1 & 1 \\ 1 & 0 & 0 \\ 1 & 1 & 1 \end{matrix}$

4. $A B E$
$\begin{matrix} 0 & 0 & 0 \\ 0 & 1 & 1 \\ 1 & 0 & 1 \\ 1 & 1 & 0 \end{matrix}$

Subtopic: Logic gates |

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Q9:

When an electric field is applied across a semiconductor:

(a)	electrons move from lower energy level to higher energy level in the conduction band.
(b)	electrons move from higher energy level to lower energy level in the conduction band.
(c)	holes in the valence band move from higher energy level to lower energy level.
(d)	holes in the valence band move from lower energy level to higher energy level.

Choose the correct option:
1. (a), (c)
2. (a), (d)
3. (b), (d)
4. (c), (d)

Subtopic: PN junction |

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Q10:

In the depletion region of a diode:

(a)	there are no mobile charges
(b)	equal number of holes and electrons exist, making the region neutral
(c)	recombination of holes and electrons has taken place
(d)	immobile charged ions exist

Choose the correct option:

1. (a), (b)

2. (a), (b), (d)

3. (c), (d)

4. All options are correct

Subtopic: PN junction |

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1.	\(1\) and \(3\) both correspond to forward bias of junction.
2.	\(3\) corresponds to forward bias of junction and \(1\) corresponds to reverse bias of junction.
3.	\(1\) corresponds to forward bias and \(3\) corresponds to reverse bias of junction.
4.	\(3\) and \(1\) both correspond to reverse bias of junction.

1.	\(D_1\) is forward biased and \(D_2\) is revers-biased and hence current flows from \(A\) to \(B\).
2.	\(D_2\) is forward biased and \(D_1\) is reverse-biased and hence no current flows from \(B\) to \(A\) and vice-versa.
3.	\(D_1\) and \(D_2\) are both forward-biased and hence current flows from \(A\) to \(B\).
4.	\(D_1\) and \(D_2\) are both reverse-biased and hence no current flows from \(A\) to \(B\) and vice-versa.

1.	\(220~\text{V}\)	2.	\(110~\text{V}\)
3.	\(0~\text{V}\)	4.	\(220\sqrt{2}~\text{V}\)

1.	\(1.3~\text V\)	2.	\(2.3~\text V\)
3.	\(0\)	4.	\(0.5~\text V\)

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