The emitter-base junction of a transistor is …… biased while the collector-base junction is ……. biased.
1. reverse, forward                       

2. reverse, reverse

3. forward, forward                       

4. forward, reverse

Subtopic:  Transistor (OLD NCERT) |
 86%
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For a transistor, the current amplification factor is 0.8 when it is connected in the common base configuration. The transistor is now connected in common emitter configuration. The change in the collector current when the base current changes by 6 mA, is:
1. 6 mA                       

2. 4.8 mA

3. 24 mA                     

4. 8 mA

Subtopic:  Applications of Transistor (OLD NCERT) |
 52%
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Consider an NPN transistor amplifier in the common-emitter configuration. The current gain of the transistor is 100. If the collector current changes by 1 mA, what will be the change in emitter current?
1. 1.1 mA                     

2. 1.01 mA

3. 0.01 mA                   

4. 10 mA

Subtopic:  Transistor (OLD NCERT) |
 72%
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Which of the following logic gate is a universal gate?
1. OR
2. NOT
3. AND
4. NOR

Subtopic:  Logic gates |
 74%
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How much is the forbidden gap (approximately) in the energy bands of germanium at room temperature? 
1. \(1.1~\text{eV}\)
2. \(0.1~\text{eV}\)
3. \(0.67~\text{eV}\)
4. \(6.7~\text{eV}\)

Subtopic:  Energy Band theory |
 60%
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In a good conductor, the energy gap between the conduction band and the valence band is:
1. Infinite
2. Wide
3. Narrow
4. Zero

Subtopic:  Energy Band theory |
 77%
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A \(Ge\) specimen is doped with \(Al\). The concentration of acceptor atoms is \(\sim10^{21}~\text{atoms/m}^3\). Given that the intrinsic concentration of electron hole pairs is \(\sim10^{19}/\text{m}^3\) the concentration of electrons in the specimen is:
1. \(10^{17} / \text{m}^3 \) 2. \(10^{15} / \text{m}^3 \)
3. \(10^4 / \text{m}^3 \) 4. \(10^2 / \text{m}^3\)
Subtopic:  Types of Semiconductors |
 70%
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In a semiconducting material, the mobilities of electrons and holes are \(\mu_e\) and \(\mu_{h}\) respectively. Which of the following is true?
1. \(\mu_{e} > \mu _{h}\)
2. \(\mu_{e} < \mu _{h}\)
3. \(\mu_{e} = \mu _{h}\)
4. \(\mu_{e} <0; ~\mu _{h}>0\)

Subtopic:  Types of Semiconductors |
 68%
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The diode used in the circuit shown in the figure has a constant voltage drop of \(0.5~\text{V}\) at all currents and a maximum power rating of \(100\) milliwatts. What should be the value of the resistor \(R\), connected in series with the diode for obtaining maximum current?


1. \(1.5~\Omega\)
2. \(5~\Omega\)
3. \(6.67~\Omega\)
4. \(200~\Omega\)

Subtopic:  PN junction |
 62%
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For the transistor circuit shown below, if β = 100, the voltage drop between emitter and base is 0.7 V, then the value of VCE will be:
                  
1. 10 V
2. 5 V
3. 13 V
4. 0 V

Subtopic:  Applications of Transistor (OLD NCERT) |
 63%
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