The emitter-base junction of a transistor is …… biased while the collector-base junction is ……. biased.
1. reverse, forward
2. reverse, reverse
3. forward, forward
4. forward, reverse
For a transistor, the current amplification factor is 0.8 when it is connected in the common base configuration. The transistor is now connected in common emitter configuration. The change in the collector current when the base current changes by 6 mA, is:
1. 6 mA
2. 4.8 mA
3. 24 mA
4. 8 mA
Consider an NPN transistor amplifier in the common-emitter configuration. The current gain of the transistor is 100. If the collector current changes by 1 mA, what will be the change in emitter current?
1. 1.1 mA
2. 1.01 mA
3. 0.01 mA
4. 10 mA
Which of the following logic gate is a universal gate?
1. OR
2. NOT
3. AND
4. NOR
How much is the forbidden gap (approximately) in the energy bands of germanium at room temperature?
1. \(1.1~\text{eV}\)
2. \(0.1~\text{eV}\)
3. \(0.67~\text{eV}\)
4. \(6.7~\text{eV}\)
In a good conductor, the energy gap between the conduction band and the valence band is:
1. Infinite
2. Wide
3. Narrow
4. Zero
1. | \(10^{17} / \text{m}^3 \) | 2. | \(10^{15} / \text{m}^3 \) |
3. | \(10^4 / \text{m}^3 \) | 4. | \(10^2 / \text{m}^3\) |
In a semiconducting material, the mobilities of electrons and holes are \(\mu_e\) and \(\mu_{h}\) respectively. Which of the following is true?
1. \(\mu_{e} > \mu _{h}\)
2. \(\mu_{e} < \mu _{h}\)
3. \(\mu_{e} = \mu _{h}\)
4. \(\mu_{e} <0; ~\mu _{h}>0\)
1. \(1.5~\Omega\)
2. \(5~\Omega\)
3. \(6.67~\Omega\)
4. \(200~\Omega\)
For the transistor circuit shown below, if = 100, the voltage drop between emitter and base is 0.7 V, then the value of will be:
1. 10 V
2. 5 V
3. 13 V
4. 0 V