1. \(2\) A and zero
2. \(3\) A and \(2\) A
3. \(2\) A and \(3\) A
4. zero and \(2\) A
If in a reverse-biased \(\mathrm{p\text-n}\) junction, an increase in carrier concentration takes place due to the creation of new hole-electron pairs by the light of wavelength less than or equal to \(620\) nm, then the bandgap is:
1. \(1\) eV
2. \(2\) eV
3. \(20\) eV
4. \(0.2\) eV
1. | 2. | ||
3. | 4. |
A n-p-n transistor operates in a common emitter mode as shown. The value of \(R_{L}\) is:
\(\small\left ( \text{Given,}I_{C}=4 mA,~V_{CE}=4~V,V_{BE}=0.6~V~\text{and}~\beta _{dc}=100 \right )\\\)
1. 1 k
2. 2 k
3. 3 k
4. 4 k
1. | It requires a low operational voltage. |
2. | It has a fast on-off switching capability. |
3. | The bandwidth of the emitted light is \(100\) A to \(10000\) A. |
4. | It does not require warm-up time. |
The variation of output potential with input potential in a transistor in CE-mode can be best represented as:
1. | 2. | ||
3. | 4. |
A combination of logic gates is shown in the circuit. If \(A\) is at \(0\) V and \(B\) is at \(5\) V, then the potential of \(R\) is:
1. | \(0\) V | 2. | \(5\) V |
3. | \(10\) V | 4. | Any of these |
How many minimum number of NOR gates are required to obtain an AND gate?
1. One
2. Two
3. Three
4. Five
The circuit shown below is an electrical analogue for which of the following logic gates?
1. AND gate
2. OR gate
3. NOT gate
4. NOR gate
What is the equivalent resistance across the terminals of the battery if the diodes are ideal?
1. | \(10~ \Omega\) | 2. | \(20~ \Omega\) |
3. | \(15~ \Omega\) | 4. | \({10\over3} ~ \Omega\) |