The net charges on $\mathrm{p}$-type semiconductor and $\mathrm{n}$-type semiconductor are, respectively:

1.	Positive, negative	2.	Negative, positive
3.	Positive, positive	4.	Zero, zero

1. \(2\) A and zero
2. \(3\) A and \(2\) A
3. \(2\) A and \(3\) A
4. zero and \(2\) A

If in a reverse-biased \(\mathrm{p\text-n}\) junction, an increase in carrier concentration takes place due to the creation of new hole-electron pairs by the light of wavelength less than or equal to \(620\) nm, then the bandgap is:
1. \(1\) eV
2. \(2\) eV
3. \(20\) eV
4. \(0.2\) eV

A n-p-n transistor operates in a common emitter mode as shown. The value of \(R_{L}\) is:
\(\small\left ( \text{Given,}I_{C}=4 mA,~V_{CE}=4~V,V_{BE}=0.6~V~\text{and}~\beta _{dc}=100 \right )\\\)
        

1. 1 k$\Omega$

2. 2 k$\Omega$

3. 3 k$\Omega$

4. 4 k$\Omega$

The variation of output potential $V_{\mathrm{o}}$ with input potential $\left(V_i\right)$ in a transistor in CE-mode can be best represented as:

1.		2.
3.		4.

A combination of logic gates is shown in the circuit. If \(A\) is at \(0\) V and \(B\) is at \(5\) V, then the potential of \(R\) is:

How many minimum number of NOR gates are required to obtain an AND gate?
1. One
2. Two
3. Three
4. Five