If the current gain in the transistor is 50, then is equal to:
1. 2 V
2. 3 V
3. 4 V
4. 6 V
The net charges on -type semiconductor and -type semiconductor are, respectively:
1. | Positive, negative | 2. | Negative, positive |
3. | Positive, positive | 4. | Zero, zero |
1. | Forward biasing | 2. | Reverse biasing |
3. | No biasing | 4. | All of these |
1. \(2\) A and zero
2. \(3\) A and \(2\) A
3. \(2\) A and \(3\) A
4. zero and \(2\) A
If in a reverse-biased \(\mathrm{p\text-n}\) junction, an increase in carrier concentration takes place due to the creation of new hole-electron pairs by the light of wavelength less than or equal to \(620\) nm, then the bandgap is:
1. \(1\) eV
2. \(2\) eV
3. \(20\) eV
4. \(0.2\) eV
1. | 2. | ||
3. | 4. |
A n-p-n transistor operates in a common emitter mode as shown. The value of \(R_{L}\) is:
\(\small\left ( \text{Given,}I_{C}=4 mA,~V_{CE}=4~V,V_{BE}=0.6~V~\text{and}~\beta _{dc}=100 \right )\\\)
1. 1 k
2. 2 k
3. 3 k
4. 4 k
1. | It requires a low operational voltage. |
2. | It has a fast on-off switching capability. |
3. | The bandwidth of the emitted light is \(100\) A to \(10000\) A. |
4. | It does not require warm-up time. |
The variation of output potential with input potential in a transistor in CE-mode can be best represented as:
1. | 2. | ||
3. | 4. |
A combination of logic gates is shown in the circuit. If \(A\) is at \(0\) V and \(B\) is at \(5\) V, then the potential of \(R\) is:
1. | \(0\) V | 2. | \(5\) V |
3. | \(10\) V | 4. | Any of these |