In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an:
1. | \(\mathrm{p}\text-\)type semiconductor |
2. | insulator |
3. | metal |
4. | \(\mathrm{n}\text-\)type semiconductor |
The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \(R_1\) will be:
1. | \(2.5\) A | 2. | \(10.0\) A |
3. | \(1.43\) A | 4. | \(3.13\) A |
1. | an open switch with infinite resistance. |
2. | a closed switch with a voltage drop of \(0\) V. |
3. | a closed switch in series with a battery with voltage of \(0.7\) V. |
4. | a closed switch in series with small resistance and a battery. |
1. | \(0^\circ-90^\circ\) | 2. | \(90^\circ-180^\circ\) |
3. | \(0^\circ-180^\circ\) | 4. | \(0^\circ-360^\circ\) |
If the input to the NOT gate is \(A\), its output is:
1. \(0\)
2. \(1\)
3. \(A\)
4. \(\overline{A}\)
The combination of gates shown below is equivalent to:
1. AND gate
2. XOR gate
3. NOR gate
4. NAND gate
1. | (i) < (ii) < (iii) | 2. | (iii) < (ii) < (i) |
3. | (ii) = (iii) < (i) | 4. | (i) = (iii) < (ii) |
1. | the drift of holes. |
2. | diffusion of charge carriers. |
3. | migration of impurity ions. |
4. | drift of electrons. |
The output in the circuit shown in the figure taken across a capacitor is:
1. | 2. | ||
3. | 4. |
Logic gates \(X\) and \(Y\) have the truth tables shown below:
\(X\) | ||
\(P\) | \(Q\) | \(R\) |
\(0\) | \(0\) | \(0\) |
\(1\) | \(0\) | \(0\) |
\(0\) | \(1\) | \(0\) |
\(1\) | \(1\) | \(1\) |
\(Y\) | |
\(P\) | \(R\) |
\(0\) | \(1\) |
\(1\) | \(0\) |
When the output of \(X\) is connected to the input of \(Y\), the resulting combination is equivalent to a single:
1. NOT gate
2. OR gate
3. NAND gate
4. AND gate