Please be patient as the PDF generation may take upto a minute.

In p-type semiconductor major current carriers are :
1. negative ions
2. holes
3. electrons
4. all of these

When the two semiconductors p and n type are brought into contact they form a p-n junction, which acts like a/an:
1. rectifier
2. amplifier
3. conductor
4. oscillator

In a full wave rectifier circuit operating from 50 Hz mains frequency, what is the fundamental frequency in the ripple ?
1. 50 Hz
2. 100 Hz
3. 70 Hz
4. 25 Hz

The truth table given above for which of the following gates is correct
1. NAND gate
2. OR gate
3. AND gate
4. NOT gate

Which of the following is true about the p-type and n-type semiconductor?

When added an impurity into the silicon which one of the following produces n-type of semiconductors :
1. iron
2. magnesium
3. aluminium
4. phosphorus

At 0 K temperature, a p-type semiconductor
1. has equal number of holes and free electrons
2. has few holes but no free electrons
3. has few holes and few free electrons
4. does not have any charge carriers

In the following common emitter configuration an npn transistor with current gain $\mathrm{\beta }$ = 100 is used. The output voltage of the amplifier will be :

1. 10 mV
2. 0.1 V
3. 1.0 V
4. 10 V

Which logic gate is represented by the following combination of logic gates ?

1. OR
2. NAND
3. AND
4. NOR

Consider an n-p-n transistor amplifier in common emitter configuration. The current gain of the transistor is 100. If the collector current changes by 1 mA, what will be the change in emitter current
1. 1.1 mA
2. 1.01 mA
3. 0.01 mA
4. 10 mA

In a semi-conducting material the mobilities of electrons and holes are ${\mathrm{\mu }}_{\mathrm{e}} \mathrm{and} {\mathrm{\mu }}_{\mathrm{h}}$ respectively. Which of the following is true?
1. ${\mathrm{\mu }}_{\mathrm{e}} > {\mathrm{\mu }}_{\mathrm{h}}$
2. ${\mathrm{\mu }}_{\mathrm{e}} < {\mathrm{\mu }}_{\mathrm{h}}$
3. ${\mathrm{\mu }}_{\mathrm{e}} = {\mathrm{\mu }}_{\mathrm{h}}$
4. ${\mathrm{\mu }}_{\mathrm{e}} =0; {\mathrm{\mu }}_{\mathrm{h}}>0$

When a p-n diode is reverse biased, then
1. no current flows
2. the depletion region is increased
3. the depletion region is reduced
4. the height of the potential barrier is reduced

Zener diode acts as a/an
1. oscillator
2. regulator
3. rectifier
4. filter

If in a p-n junction diode, a square input signal of 10 V is applied as shown

Then the output signal across R_L will be
1. 
2. 
3. 
4. 

The input resistance of a common emitter transistor amplifier, if the output resistance is 500 $\mathrm{k\Omega }$, the current gain $\mathrm{\alpha }=0.98$ and power gain is $6.0625\times {10}^6$, is 
1. 198 $\mathrm{\Omega }$
2. 300 $\mathrm{\Omega }$
3. 100 $\mathrm{\Omega }$
4. 400 $\mathrm{\Omega }$

An LED (Light Emitting Diode) is constructed from p-n junction based on a certain Ga-As-P semi-conducting material whose energy gap is 1.9 eV. What is the wavelength of the emitted light?
1. 650 nm
2. 65 $\stackrel{\mathrm{o}}{\mathrm{A}}$
3. 800 nm
4. 8000 $\stackrel{\mathrm{o}}{\mathrm{A}}$

The cause of the potential barrier in a p-n junction diode is 
1. depletion of positive charges near the junction
2. concentration of positive charges near the junction
3. depletion of negative charges near the junction
4. concentration of positive and negative charges near the junction

Which represents NAND gate ?
1. 
2. 
3. 
4. 

The real time variation of input signals A and B are as shown below. If the inputs are fed into NAND gate, then select the output signal from the following.

1. 
2. 
3. 
4. 

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is 

1. 0.75 A
2. 0.5 A
3. 0.25 A
4. zero